RBE2EA20ATR ROHM

RBE2EA20A Schottky Barrier Diode Data sheet Outline V 20 V R I 2 A o I 5 A FSM Features Inner Circuit High reliability Small mold type Super low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial Taping Code TR Marking D2S Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 20 V R Glass epoxy mounted I 60Hz half sin waveform Average rectified forward current 2 A o resistive loadI /2 per dIode o 60Hz half sin waveformNon-repetitive I Peak forward surge current 5 A FSM one cycleper diodeT =25C a (1) T Junction temperature - 125 j T Storage temperature - -40 125 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Value per diode Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =1A - - 0.39 V F F Reverse current I V =20V - - 700 A R R Attention www.rohm.com 1/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001RBE2EA20A Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001