RCJ510N25 Nch 250V 51A Power MOSFET Datasheet Outline V 250V DSS LPT(S) (SC-83) R (Max.) 65m DS(on) I 51A D (1) (2) P 304W (3) D Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 1 (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 24 Switching Power Supply Type Basic ordering unit (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ510N25 Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 T = 25C I 51 A c D Continuous drain current *1 T = 100C A I 27.7 c D *2 Pulsed drain current I 160 A D,pulse V V Gate - Source voltage 30 GSS *3 Avalanche energy, single pulse E 197.9 mJ AS *3 Avalanche current I 25.5 A AR T = 25C P 304 W c D Power dissipation *4 P T = 25C 1.56 W D a Junction temperature T 150 C j T Range of storage temperature 55 to 150 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 1/12Data Sheet RCJ510N25 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.41 C/W thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 250 - - V (BR)DSS GS D V = 250V, V = 0V DS GS I Zero gate voltage drain current -- 10 A DSS T = 25C j I V = 30V, V = 0V Gate - Source leakage current -- 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS (th) DS D V = 10V, I = 25.5A -48 65 GS D Static drain - source *5 V = 10V, I = 25.5A R m GS D DS(on) on - state resistance - 110 155 T = 125C j Forward transfer admittance g V = 10V, I = 25.5A 10 20 - S fs DS D www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2016.02 - Rev.B 2/12