X-On Electronics has gained recognition as a prominent supplier of RE1J002YNTCL mosfet across the USA, India, Europe, Australia, and various other global locations. RE1J002YNTCL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RE1J002YNTCL ROHM

RE1J002YNTCL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RE1J002YNTCL
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET Small Signal MOSFET N-CH .9V Drive .2A
Datasheet: RE1J002YNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

729: USD 0.0558 ea
Line Total: USD 40.68

Availability - 36365
Ships to you between
Tue. 04 Jun to Mon. 10 Jun
MOQ: 729  Multiples: 1
Pack Size: 1
Availability Price Quantity
2793 - WHS 1


Ships to you between
Tue. 11 Jun to Fri. 14 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1314
50 : USD 0.1054
150 : USD 0.0925
500 : USD 0.0827
3000 : USD 0.0751
6000 : USD 0.0712

5044 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3404
10 : USD 0.2358
100 : USD 0.0943
1000 : USD 0.0747
3000 : USD 0.0598
9000 : USD 0.0541
24000 : USD 0.0517
45000 : USD 0.0483
99000 : USD 0.0471

36365 - WHS 3


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 729
Multiples : 1
729 : USD 0.0558
1000 : USD 0.0478
2000 : USD 0.0451
3000 : USD 0.045
6000 : USD 0.0422
12000 : USD 0.0398
24000 : USD 0.0374

16611 - WHS 4


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 538
Multiples : 1
538 : USD 0.1826
1000 : USD 0.1767
2500 : USD 0.1715
5000 : USD 0.1669
10000 : USD 0.1628

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RE1J002YNTCL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RE1J002YNTCL and other electronic components in the MOSFET category and beyond.

RE1J002YN Datasheet Nch 50V 200mA Small Signal MOSFET llOutline SOT-416FL V 50V DSS SC-89 R (Max.) 2.2 DS(on) EMT3F I 200mA D P 150mW D llInner circuit llFeatures 1) Low voltage drive(0.9V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking QJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 50 V DSS I Continuous drain current 200 mA D *1 I Pulsed drain current 800 mA DP V Gate - Source voltage 8 V GSS *2 P Power dissipation 150 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 RE1J002YN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 50 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 53.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 50V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.3 - 0.8 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.4 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 200mA - 1.6 2.2 GS D V = 2.5V, I = 200mA - 1.7 2.4 GS D Static drain - source *3 R V = 1.5V, I = 200mA - 2.0 2.8 DS(on) GS D on - state resistance V = 1.2V, I = 100mA - 2.2 3.3 GS D V = 0.9V, I = 10mA - 3.0 9.0 GS D Forward Transfer *3 Y V = 10V, I = 200mA 200 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160624 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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