RF1601T2D ROHM

Data Sheet Fast recovery diodes RF1601T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 Features (1) (2) (3) 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 1.2 1.3 Construction 0.8 Silicon epitaxial planar (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : TO220FN Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 200 V RM Reverse voltage (DC) V 200 V R Average rectified forward current (*1) 16 Io A Forward current surge peak (60Hz/1cyc) 80 I A FSM Junction temperature Tj 150 C Storage temoerature 55 to 150 Tstg C (*1)Business frequency, Rating of R-load, Tc=120 C. 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.93 V I =8A F F Reverse current I -- 10 A V =200V R R Reverse recovery time trr - - 30 ns I =0.5A,I =1A,Irr=0.25*I F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.D 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0RF1601T2D Data Sheet Electrical characteristics curves 1000 Ta=150 C 10 10000 f=1MHz Ta=125 C Ta=150 C 1000 1 Ta=125 C Ta=75 C 100 Ta=25 C 100 0.1 Ta=75 C Ta=25 C Ta=-25 C 10 10 0.01 Ta=-25C 1 0.001 1 0 100 200 300 400 500 600 700 800 900 100 0.1 0 0 5 10 15 20 25 30 0 50 100 150 200 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) F R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R F F R R 890 100 320 Ta=25 C Ta=25 C 315 90 Ta=25 C f=1MHz V =200V R I =8A 310 80 V =0V 880 F R n=30pcs n=30pcs n=10pcs 305 70 300 60 870 295 50 290 40 860 AVE:11.6nA AVE:293.4pF 285 30 AVE:862.3mV 280 20 850 275 10 270 0 840 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 300 30 Ta=25 C Ifsm 1cyc I =0.5A Ifsm F 250 25 I =1A R 8.3ms 8.3ms Irr=0.25*I R 8.3ms 100 200 1cyc 20 n=10pcs 150 15 10 100 10 50 5 AVE:210.0A AVE:18.3ns 0 1 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 30 1000 100 Mounted on epoxy board 25 IM=100mA Ifsm I =8A F t DC D=1/2 20 1ms 10 time Rth(j-a) Sin( =180) 300us 15 100 10 Rth(j-c) 1 5 0 10 0.1 0 5 10 15 20 25 30 35 40 110 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENT:Io(A) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (nA) R TRANSIENT REVERSE CURRENT:I (nA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth ( C/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:I (A) FSM DISSIPATION:Pf(W)