RF2001T2D ROHM

Data Sheet Fast recovery diode RF2001T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 Features 0.1 (1) (2) (3) 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 1.2 Construction 1.3 Silicon epitaxial planar 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : TO220FN Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) 200 V V RM Reverse voltage (DC) 200 V V R Average rectified forward current (*1) Io 20 A Forward current surge peak (60Hz/1cyc) I 100 A FSM Junction temperature 150 Tj C Storage temoerature Tstg 55 to 150 C (*1)Business frequencies, Rating of R-load, Tc=113 C. 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - 0.87 0.93 V I =10A F F Reverse current I - 0.01 10 A V =200V R R Reverse recovery time trr - 20 30 ns I =0.5A,I =1A,Irr=0.25*I F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.D 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0RF2001T2D Data Sheet Electrical characteristics curves Ta=150 C 10 10000 1000 Ta=150 C f=1MHz Ta=125 C 1000 1 Ta=125 C Ta=25 C Ta=75 C 100 100 Ta=75 C 0.1 Ta=25 C Ta=-25 C 10 10 0.01 Ta=-25C 1 0.001 0 100 200 300 400 500 600 700 800 900 100 1 0.1 0 0 5 10 15 20 25 30 0 50 100 150 200 250 300 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R (mV) FORWARD VOLTAGE:V F V -Ct CHARACTERISTICS V -I CHARACTERISTICS R R R V -I CHARACTERISTICS F F 890 400 100 Ta=25 C Ta=25C Ta=25 C 90 I =10A F 390 V =300V f=1MHz R n=30pcs 880 80 n=30pcs V =0V R 380 n=10pcs 70 370 870 60 360 50 860 40 350 30 AVE:352.9pF 340 AVE:10.1nA 850 20 AVE:867.0mV 330 10 320 840 0 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 300 30 1000 Ta=25 C Ifsm Ifsm 1cyc I =0.5A 250 F 25 I =1A R 8.3ms 8.3ms 8.3ms Irr=0.25*I R 1cyc 200 20 100 n=10pcs 15 150 100 10 10 5 50 AVE:237.0A AVE:20.2ns 0 1 0 110 100 I DISPERSION MAP trr DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 40 1000 100 Mounted on epoxy board IM=100mA 35 I =10A F Ifsm t 30 DC 1ms time Rth(j-a) 10 25 D=1/2 300us 20 100 Sin( =180) 15 Rth(j-c) 1 10 5 10 0 0.1 1 10 100 0 5 10 15 20 25 30 35 40 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FORWARD CURRENT:Io(A) Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (nA) R TRANSIENT REVERSE CURRENT:I (nA) R REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth ( C/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM FORWARD POWER DISSIPATION:Pf(W)