RF2001T3D ROHM

Fast recovery diodes Datasheet RF2001T3D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 Features 10.00.3 0.1 0.1 (1) (2) (3) 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 1.2 Construction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : O220FN Manufacture Date Absoslute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 350 V RM Reverse voltage (DC) V 300 V R Average rectified forward current (*1) Io 20 A Forward current surge peak (60Hz/1cyc) I 100 A FSM Junction temperature 150 Tj C Storage temoerature Tstg 55 to 150 C (*1)Business frequency, Rating of R-load, Tc=113C 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V -- 1.3 V I =10A F F I Reverse current -- 10 A V =300V R R I =0.5A,I =1A,Irr=0.25*I Reverse recovery time trr - - 25 ns F R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.06 - Rev.E 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RF2001T3D Electrical characteristics curves Ta=150C 1000 10 100000 Ta=125C Ta=150C f=1MHz 10000 1 Ta=125 C Ta=25 C 100 1000 Ta=75C Ta=75 C 0.1 Ta=-25 C 100 Ta=25C 10 10 0.01 Ta=-25 C 1 0.001 010 20 30 40 50 60 70 80 90 10 11 12 1 0.1 0 0 0 0 0 0 0 0 0 00 00 00 0 50 100 150 200 250 300 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R FORWARD VOLTAGE:V (mV) F V -I CHARACTERISTICS V -Ct CHARACTERISTICS R R R V -I CHARACTERISTICS F F 400 1.17 300 Ta=25 C 390 Ta=25C Ta=25 C f=1MHz I =10A V =300V 250 F R 380 V =0V 1.16 R n=30pcs n=30pcs n=10pcs 370 200 360 1.15 350 150 AVE:356.9pF 340 1.14 100 330 AVE:29.7nA 320 1.13 50 AVE:1.135V 310 300 0 1.12 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 30 200 Ta=25 C Ifsm 1cyc I =0.5A F Ifsm 25 I =1A R Irr=0.25*I 8.3ms R 150 8.3ms 8.3ms 20 n=10pcs 100 1cyc 15 100 10 10 50 5 AVE:20.3ns AVE:157.0A 0 0 1 110 100 trr DISPERSION MAP I DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM Mounted on epoxy board 40 100 1000 DC IM=100mA I =5A D=1/2 F Ifsm 30 t 1ms time Sin(=180) Rth(j-a) 10 300us 20 100 Rth(j-c) 1 10 0 10 0.1 0 1020 3040 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) AVERAGE RECTIFIED TIME:t(s) FORWARD CURRENT:Io(A) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.06 - Rev.E 2/3 Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) F F FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) FSM FSM REVERSE CURRENT:I (nA) R TRANSIENT REVERSE CURRENT:I (nA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE TERMINALS:Ct(pF) FORWARD POWER FORWARD CURRENT:I (A) FSM DISSIPATION:Pf(W)