Product Information

RF501BM2SFHTL

RF501BM2SFHTL electronic component of ROHM

Datasheet
ROHM Semiconductor Silicon epitaxial planar type Fast Recovery Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

82: USD 0.5087 ea
Line Total: USD 41.71

4806 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 82  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1833
10 : USD 0.9431
100 : USD 0.7715
500 : USD 0.6847
1000 : USD 0.5723
2500 : USD 0.5482
5000 : USD 0.5482
10000 : USD 0.5277

2425 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 108
Multiples : 1
108 : USD 0.9551
250 : USD 0.9268
500 : USD 0.9082

4806 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 82
Multiples : 1
82 : USD 0.5087
100 : USD 0.4225
200 : USD 0.4021

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Maximum Operating Temperature
Series
Qualification
Packaging
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RF501BM2SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Cathode Features Structure ROHM : TO-252 1) Low switching loss JEITA : SC-63 1 : Manufacture Date 2) Low forward voltage Open Anode Taping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 1.550.1 0.40.1 Construction 0 Silicon epitaxial planar type TL 33.0.00.01.1 6.80.1 8.00.1 2.70.2 Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 200 V R Average rectified foward current I 60Hz half sin wave , Resistive load 5 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 40 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =5A Forward voltage V - 0.85 0.92 V F F I V =200V Reverse current -- 1 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 15 25 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) 2018.10 - Rev.C 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0Datasheet RF501BM2SFH Electrical Characteristic Curves 100 10000 T = 150 C j 1000 10 T = 125 C j 100 1 T = 150 C j T = 75 C j 10 T = 125 C j 0.1 T = 75 C j 1 T = 25 C j T = 25 C j 0.01 0.1 0 50 100 150 200 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = f = 1M1MHzHz I FSM TT = 25= 25 CC aa 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t 2018.10 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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