RF501BM2SFHTL ROHM

Super Fast Recovery Diode RF501BM2SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Cathode Features Structure ROHM : TO-252 1) Low switching loss JEITA : SC-63 1 : Manufacture Date 2) Low forward voltage Open Anode Taping Dimensions (Unit : mm) 2.00.05 1.550.1 4.00.1 8.00.1 1.550.1 0.40.1 Construction 0 Silicon epitaxial planar type TL 33.0.00.01.1 6.80.1 8.00.1 2.70.2 Absolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 200 V R Average rectified foward current I 60Hz half sin wave , Resistive load 5 A o 60Hz half sin wave ,Non-repetitive at T=25C Forward current surge peak I 40 j A FSM Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =5A Forward voltage V - 0.85 0.92 V F F I V =200V Reverse current -- 1 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 15 25 ns F R R Thermal resistance R Junction to case -- 6.0 C / W th(j-c) 2018.10 - Rev.C 1/4 10.10.1 00.5 13.50.2 7.50.05 2.50.1 16.00.2 10.10.1 3.0 2.0 6.0Datasheet RF501BM2SFH Electrical Characteristic Curves 100 10000 T = 150 C j 1000 10 T = 125 C j 100 1 T = 150 C j T = 75 C j 10 T = 125 C j 0.1 T = 75 C j 1 T = 25 C j T = 25 C j 0.01 0.1 0 50 100 150 200 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = f = 1M1MHzHz I FSM TT = 25= 25 CC aa 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t 2018.10 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM