Product Information

RF505B6STL

RF505B6STL electronic component of ROHM

Datasheet
Diode Switching 600V 5A 3-Pin(2+Tab) SC-63 T/R
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

101: USD 0.9846 ea
Line Total: USD 99.44

1791 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 101  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1781 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 101
Multiples : 1
101 : USD 0.9481
250 : USD 0.9291

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RF505B6S Series DimensionsUnit : mm Land size figure (Unit : mm) 6.0 Standard Fast Recovery (2) Applications General rectification 1.6 1.6 (3) (1) Features CPD 1)Power mold type. (CPD) 2.3 2.3 2)High switching speed 3)Low Reverse current Structure (2) Production month Construction Silicon epitaxial planar (1) (3) Taping dimensionsUnit : mm Absolute maximum ratingsTc=25C Parameter Conditions Limits Unit Symbol Repetitive peak Reverse voltage V Duty0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified forward current Io 60Hz half sin wave,resistive load Tc=42C 5 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 50 A FSM one cycle peak value, Tj=25 C Junction temperature Tj 150 C Storage temperature 55 to 150 C Tstg Electrical characteristicsTj=25C Parameter Conditions Min. Typ. Max. Symbol Unit V I =5.0A - 1.3 1.7 Forward voltage F F V Reverse current I V =600V - 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr -22 30 ns F R R - 12 Thermal resistance Rth(j-l) junction to lead C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A 3.0 2.0 6.0Data Sheet RF505B6S Electrical characteristic curves 1000 100000 100 Tj=150C f=1MHz Tj=125 C 10000 10 Tj=150 C 100 Tj=75 C 1000 Tj=125 C 1 100 Tj=25 C Tj=25 C 10 0.1 10 Tj=75 C 0.01 1 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R FORWARD VOLTAGE:V (mV) F V -I CHARACTERISTICS V -Ct CHARACTERISTICS V -I CHARACTERISTICS R R R F F 1400 100 170 Tj=25 C Tj=25 C Tj=25 C I =5A F f=1MHz 1350 V =600V R 160 n=20pcs V =0V R n=20pcs n=10pcs 1300 AVE:33.7nA 150 1250 10 AVE:150.6pF 140 1200 130 AVE:1297mV 1150 120 1100 1 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 30 300 Tj=25C 250 25 I =0.5A F 1cyc Ifsm I =1A R 100 200 20 Irr=0.25I R 8.3ms AVE:22.0ns n=10pcs 15 150 Ifsm 10 100 10 AVE:107.5A 8.3ms 8.3ms 50 5 1cyc 0 1 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 30 100 No break at 30kV On glass-epoxy board Ifsm 25 Rth(j-a) t 20 10 AVE:19.9kV 15 Rth(j-c) 100 IM=100mA I =1.5A F 10 1 1ms 5 time 300us 0 10 0.1 C=200pF C=100pF 110 100 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (nA) R ELECTROSTATIC REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (nA) R DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE TRANSIENT TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM THAERMAL IMPEDANCE:Rth (C/W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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