Data Sheet Super Fast Recovery Diode RF505TF6S Series Dimensions (Unit : mm) Structure Standard Fast Recovery Applications General rectification RF505 TF6S Features 1)Low switching loss 2)High current overload capacity Construction Silicon epitaxial planer ROHM : TO220NFM Manufacture Year Manufacture Week Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit V Repetitive peak reverse voltage Duty0.5 600 V RM Reverse voltage V Direct voltage 600 V R 60Hz half sin wave, Resistance load, Tc=125C Average rectified forward current Io 5 A 60Hz half sin wave, Non-repetitive Forward current surge peak I 80 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg C 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =5A Forward voltage 1.3 1.7 V F F Reverse current I V =600V R 0.03 10 A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 22 30 ns F R R junction to case Thermal resistance Rth(j-c) 3 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4Data Sheet RF505TF6S 1000000 100 Tj=125 C 100000 Tj=150 C 10 Tj=125 C Tj=150 C 10000 1 1000 Tj=25 C 0.1 100 Tj=25 C 0.01 10 0.001 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) F REVERSE VOLTAGE : V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1500 I =5A F f=1MHz Tj=25 C 1400 100 1300 1200 10 AVE:1247mV 1100 1 1000 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 1000 180 V =600V R f=1MHz V =0V Tj=25 C R Tj=25 C 100 160 AVE:22.4nA 10 140 AVE:150.2pF 1 120 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT : I (nA) FORWARD CURRENT:I (A) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF)