RF601T2D ROHM

Data Sheet Fast recovery diode RF601T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 Features 10.00.3 0.1 (1) (2) (3) 0.1 1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss Construction 1.2 Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 200 V RM Reverse voltage (DC) 200 V V R Average rectified forward current (*1) Io 6 A Forward current surge peak (60Hz/1cyc) I 60 A FSM Junction temperature Tj 150 C Storage temoerature 55 to 150 Tstg C (*1)Business frequency, Rating of R-load, Tc=132 CMAX. 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - 0.87 0.93 V I =3A F F Reverse current I - 0.01 10 A V =200V R R Reverse recovery time trr - 18 25 ns I =0.5A,I =1A,Irr=0.25*I F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.C 1/3 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RF601T2D Electrical characteristics curves 10 10000 100 Ta=150 C Ta=125 C f=1MHz Ta=150C 1000 1 Ta=125 C Ta=75 C 100 Ta=75 C 0.1 10 Ta=25 C Ta=25 C 10 Ta=-25 C 0.01 Ta=-25 C 1 0.001 1 0 100 200 300 400 500 600 700 800 900 100 0 5 10 15 20 25 30 0 0.1 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F REVERSE VOLTAGE:V (V) R R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 890 100 150 Ta=25C Ta=25 C Ta=25 C 90 140 I =3A V =200V f=1MHz F R 880 80 130 V =0V n=30pcs n=30pcs R n=10pcs 120 70 110 870 60 100 50 90 AVE:99.4pF 860 40 80 30 AVE:4.60nA AVE:859.4mV 70 850 20 60 10 50 840 0 V DISPERSION MAP I DISPERSION MAP F R Ct DISPERSION MAP 30 1000 300 Ta=25 C I =0.5A F Ifsm 1cyc 25 Ifsm 250 I =1A R Irr=0.25*I R 8.3ms 8.3ms 8.3ms 20 200 100 n=10pcs 1cyc 15 150 100 10 10 AVE:13.7ns AVE:126.0A 50 5 0 0 1 110 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 10 1000 100 Mounted on epoxy board IM=100mA I =3A F DC Ifsm 8 D=1/2 t 1ms time Rth(j-a) 10 6 Sin(=180) 300us 100 4 Rth(j-c) 1 2 10 0 0.1 1 10 100 02468 10 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FORWARD CURRENT:Io(A) FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F F FSM REVERSE CURRENT:I (nA) R TRANSIENT REVERSE CURRENT:I (nA) R REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (C/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE TERMINALS:Ct(pF) FORWARD POWER FORWARD CURRENT:I (A) FSM DISSIPATION:Pf(W)