RFNL10BM6SFHTL ROHM

RFNL10BM6SFHTL electronic component of ROHM
RFNL10BM6SFHTL ROHM
RFNL10BM6SFHTL Diodes - General Purpose, Power, Switching
RFNL10BM6SFHTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RFNL10BM6SFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFNL10BM6SFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. RFNL10BM6SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SIC FAST RECOVERY DIODE
Datasheet: RFNL10BM6SFHTL Datasheet (PDF)
Price (USD)
1: USD 1.5375 ea
Line Total: USD 1.54 
Availability : 1293
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 1.5375
10$ 1.032
100$ 0.8426
500$ 0.7293
1000$ 0.6578
2500$ 0.6127
5000$ 0.5885

Availability 1293
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5375
10$ 1.032
100$ 0.8426
500$ 0.7293
1000$ 0.6578
2500$ 0.6127
5000$ 0.5885

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFNL10BM6SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFNL10BM6SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFNL10BM6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Applications 1.6 1.6 General rectification 1 For PFC 2.3 2.3 TO-252 (DCM : Discontinuous Current Mode) Cathode Structure ROHM : TO-252 Features JEITA : SC-63 1) Ultra low forward voltage 1 : Manufacture Date Open Anode 2) Low switching loss Taping Dimensions (Unit : mm) High current overload capacity 3) Construction Silicon epitaxial planar type Absolute Maximum Ratings (at T = 25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Reverse direct voltage 600 Reverse voltage V R 60Hz half sin waveform, I Average rectified foward current 10 A o resistive load, T =80CMax c 60Hz half sin waveform, I Peak forward surge current 100 A FSM non-repetitive T=25C j T - 150 Junction temperature C j T Storage temperature - 55 150 C stg Electrical Characteristics (at T = 25C unless otherwise specified) j Parameter Conditions Symbol Min. Typ. Max. Unit T =25C j 0.85 1.05 1.25 V Forward voltage V I =8A F F T =125C j - 0.9 - V T =25C 0.9 1.1 1.3 V j V I =10A Forward voltage F F T =125C - 0.95 - V j T =25C j - - 10 A I V =600V Reverse current R R T =125C j - - 200 A I =0.5A, I =1A, Irr=0.25I - 45 65 ns F R R Reverse recovery time trr I =10A, V =400V, dI /dt=-100A/ s - 100 150 ns F R F Forward recovery time tfr - 180 - ns I =10A, dI /dt=100A/s, F F V =1.1V V FR Fmax Forward recovery voltage - 3.3 - V Fp R Junction to ambient C / W - - 12 th(j-a) Thermal resistance R Junction to case - - 4.5 C / W th(j-c) (1) Value is guaranteed by design 2020/09/11 Rev.001 1/5 6.0 3.0 2.0Datasheet RFNL10BM6SFH Electrical Characteristic Curves 100 100000 T = 150C j T = 125C j 10000 10 1000 T = 75C j T = 150C j 1 100 T = 25C j T = 125C j 10 T = 75C j 0.1 1 T = 25C j 0.01 0.1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25C j f = 1MHz T = 25C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t 2020/09/11 Rev.001 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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