RFX10TF6S ROHM

Data Sheet Super Fast Recovery Diode RFX10TF6S Series Dimensions (Unit : mm) Structure +0.3 +0.3 Ultra Fast Recovery -0.1 -0.1 +0.2 -0.1 Applications General rectification RFX10 (3) (1) TF6S Features 1)Single type.(TO-220) 2)High switching speed (3) (1) 3)Soft Recovery +0.1 -0.05 Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25C) Parameter Conditions Limits Symbol Unit Repetitive peak reverse voltage V 600 Duty 0.5 V RM Reverse voltage V Direct voltage 600 V R Average rectified forward current Io 60Hz half sin wave, Resistance load, Tc=57 C 10 A 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical characteristics (Tj=25 C) Parameter Conditions Min. Typ. Max. Symbol Unit I =10A 2 2.5 Forward voltage V - V F F I V =600V 0.15 10 Reverse current - A R R Reverse recovery time trr I =0.5A,I =1A,Irr=0.25I - 16 30 ns F R R -- 3.5 Thermal Resistance Rth(j-c) junction to case C / W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 Not Recommended for New Designs +0.4 -0.2 1.6MAXData Sheet RFX10TF6S Electrical characteristics curves 100 1000000 1000 f=1MHz Tj=125 C Tj=150 C Tj=125 100000 Tj=25C Tj=150 10000 10 Tj=75C 1000 Tj=25 100 Tj=25 C Tj=75 100 1 10 1 10 0.1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 0 10002000300040005000 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R R V -I CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS F F R 250 1000 2300 Ta=25C T =25 C T=25C f=1MHz V =600V 240 R I =10A V =0V F R 2200 n=20pcs n=20pcs n=10pcs 100 230 2100 AVE : 140.3nA 220 2000 10 AVE : 224.6pF 210 1900 AVE : 1976mV 200 1 1800 V DISPERSION MAP I DISPERSION MAP R F Ct DISPERSION MAP 1000 200 30 T =25C 25 I =0.5A F 150 I =1A R 100 20 Irr=0.25I R n=10pcs AVE : 163.5A 100 15 AVE : 15.8ns 10 10 I FSM I 1cyc 50 FSM 5 8.3ms 8.3ms 8.3ms 1cyc. 1 0 0 110 100 NUMBER OF CYCLES trr DISPERSION MAP I DISRESION MAP FSM I -CYCLE CHARACTERISTICS FSM 10 1000 10 Rth(j-c) 8 I FSM time 6 AVE : 5.80kV 100 1 4 AVE : 1.08kV 2 0 10 0.1 C=200pF C=100pF 110 100 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS ESD DISPERSION MAP FSM Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A Not Recommended for New Designs ITS ABILITY OF PEAK SURGE PEAK SURGE FORWARD CURRENT : I (A) FSM FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) FORWARD CURRENT : I (A) F F FSM ELECTROSTATIC REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) DISCHARGE TEST ESD(KV) CAPACITANCE BETWEEN TRANSIENT PEAK SURGE CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I (A) TERMINALS : Ct(pF) THAERMAL IMPEDANCE : Rth (C/W) FSM