RGTVX2TS65DGC11 ROHM

RGTVX2TS65DGC11 electronic component of ROHM
RGTVX2TS65DGC11 ROHM
RGTVX2TS65DGC11 IGBT Transistors
RGTVX2TS65DGC11  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RGTVX2TS65DGC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTVX2TS65DGC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. RGTVX2TS65DGC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: IGBT Transistors 650V 60A Field Stop Trench IGBT
Datasheet: RGTVX2TS65DGC11 Datasheet (PDF)
Price (USD)
450: USD 4.6084 ea
Line Total: USD 2073.78 
Availability : 0
  
QtyUnit Price
450$ 4.6084

Availability 0
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.752
10$ 8.8833
100$ 7.1194
500$ 6.2842
1000$ 5.6558
2000$ 5.3747


Availability 0
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 450
Multiples : 450
QtyUnit Price
450$ 4.6084


Availability 0
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 19
Multiples : 1
QtyUnit Price
19$ 5.3504


Availability 0
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 14
Multiples : 1
QtyUnit Price
14$ 6.048
25$ 5.927


Availability 0
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 6
Multiples : 6
QtyUnit Price
6$ 4.5542

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGTVX2TS65DGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTVX2TS65DGC11 and other electronic components in the IGBT Transistors category and beyond.

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RGTVX2TS65 Datasheet 650V 60A Field Stop Trench IGBT lOutline TO-247N V 650V CES I 60A C (100C) V 1.5V CE(sat) (Typ.) P 319W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector (3) Emitter 3) Short Circuit Withstand Time 2s (1) 4) Pb - free Lead Plating ; RoHS Compliant (3) lApplication lPackaging Specifications Solar Inverter Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 PFC Packing Code C11 Marking RGTVX2TS65 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 111 A C C Collector Current T = 100C I 60 A C C *1 Pulsed Collector Current I 240 A CP T = 25C P 319 W C D Power Dissipation T = 100C P 159 W C D T Operating Junction Temperature -40 to +175 C j Storage Temperature T -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2021.02 - Rev.B 2021 ROHM Co., Ltd. All rights reserved. 1/9Datasheet RGTVX2TS65 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.47 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 41.9mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 60A, V = 15V, C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2021.02 - Rev.B 2021 ROHM Co., Ltd. All rights reserved. 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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