Product Information

RJ1G08CGNTLL

RJ1G08CGNTLL electronic component of ROHM

Datasheet
MOSFET NCH 40V 80A POWER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.0836 ea
Line Total: USD 1083.6

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 1.9895
10 : USD 1.6905
100 : USD 1.3915
250 : USD 1.334
500 : USD 1.196
1000 : USD 1.0384
2000 : USD 1.0281
5000 : USD 1.0212
10000 : USD 0.9867

     
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RJ1G08CGN Datasheet Nch 40V 80A Power MOSFET llOutline TO-263AB V 40V DSS R (Max.) 5.6m DS(on) LPT(L) I 80A D P 78W D llFeatures llInner circuit 1) Low on - resistance 2) High power small mold package (LPTL) 3) Pb-free lead plating ; RoHS compliant 4) 100% UIS tested llApplication llPackaging specifications Embossed Switching Packing Tape Basic ordering unit (pcs) 1000 Type Taping code TLL RJ1G08CGN Marking llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 40 V DSS *1 Continuous drain current V = 10V I 80 A GS D *2 I Pulsed drain current 160 A DP V Gate - Source voltage 20 V GSS *3 Avalanche current, single pulse I 30 A AS *3 E Avalanche energy, single pulse 35 mJ AS *1 Power dissipation P 78 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170117 - Rev.002 RJ1G08CGN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 1.6 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 500 nA GSS GS DS V Gate threshold voltage V = V , I = 500A 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 80A - 4.2 5.6 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 40A - 5.0 6.7 GS D R Gate resistance f = 1MHz, open drain - 3.4 - G Forward Transfer *4 |Y | V = 5V, I = 40A 25 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.05mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Pulsed www.rohm.com 2/11 20170117 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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