MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 m , 60 A NVBG040N120SC1 Features Typ. R = 40 m DS(on) www.onsemi.com Ultra Low Gate Charge (Typ. Q = 106 nC) G(tot) Low Effective Output Capacitance (Typ. C = 139 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested AECQ101 Qualified and PPAP Capable 1200 V 56 m 20 V 60 A This Device is PbFree and is RoHS Compliant Drain (TAB) Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV Gate (Pin 1) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit Driver Source (Pin 2) DraintoSource Voltage V 1200 V DSS GatetoSource Voltage V +25/15 V Power Source (Pins 3, 4, 5, 6, 7) GS Recommended Operation Values T < 175C V +20/5 V C GSop NCHANNEL MOSFET of Gate Source Voltage Continuous Drain Steady T = 25C I 60 A C D State Current (Note 1) Power Dissipation P 357 W D (Note 1) Steady T = 100C Continuous Drain I 43 A C D Current (Note 1) State Power Dissipation P 178 W D D2PAK7L (Note 1) CASE 418BJ Pulsed Drain Current (Note 2) T = 25C I 240 A A DM Single Pulse Surge T = 25C, t = 10 s, I 416 A A p DSC MARKING DIAGRAM Drain Current Capa- R = 4.7 G bility AYWWZZ Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 NVBG 040120SC1 Source Current (Body Diode) I 36 A S Single Pulse DraintoSource Avalanche E 578 mJ AS A = Assembly Location Energy (I = 34 A , L = 1 mH) (Note 3) L pk Y = Year Maximum Lead Temperature for Soldering, T 300 C L WW = Work Week 1/8 from Case for 10 Seconds ZZ = Lot Traceability NVBG040120SC1 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, ORDERING INFORMATION they are not constants and are only valid for the particular conditions noted. See detailed ordering and shipping information on page 6 of 2. Repetitive rating, limited by max junction temperature. this data sheet. 3. E of 578 mJ is based on starting T = 25C L = 1 mH, I = 34 A, V = AS J AS DD 120 V, V = 18 V. GS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2021 Rev. 1 NVBG040N120SC1/DNVBG040N120SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance JunctiontoCase (Note 1) R 0.42 C/W JC Thermal Resistance JunctiontoAmbient (Note 1) R 40 C/W JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, refer to 25C 0.45 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 10 mA 1.8 3 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 35 A, T = 25C 40 56 m DS(on) GS D J V = 20 V, I = 35 A, T = 175C 71 100 m GS D J Forward Transconductance g V = 20 V, I = 35 A 20 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, 1789 pF ISS GS V = 800 V DS Output Capacitance C 139 OSS Reverse Transfer Capacitance C 12.5 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 106 nC G(TOT) GS DS I = 47 A D Threshold Gate Charge Q 18 G(TH) GatetoSource Charge Q 34 GS GatetoDrain Charge Q 26 GD GateResistance R f = 1 MHz 2 G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/20 V, V = 800 V, 17 30 ns d(ON) GS DS I = 47 A, R = 4.7 , D G Rise Time t 20 36 r Inductive Load TurnOff Delay Time t 30 48 d(OFF) Fall Time t 9 18 f TurnOn Switching Loss E 366 J ON TurnOff Switching Loss E 200 OFF Total Switching Loss E 566 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 36 A SD GS J Current Pulsed DrainSource Diode Forward Current I V = 5 V, T = 25C 240 A SDM GS J (Note 2) Forward Diode Voltage V V = 5 V, I = 17.5 A, T = 25C 3.7 V SD GS SD J www.onsemi.com 2