RLD65NZX1-00A ROHM

RLD65NZX1-00A electronic component of ROHM
RLD65NZX1-00A ROHM
RLD65NZX1-00A Laser Diodes
RLD65NZX1-00A  Optoelectronics
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RLD65NZX1-00A Laser Diodes across the USA, India, Europe, Australia, and various other global locations. RLD65NZX1-00A Laser Diodes are a product manufactured by ROHM. We provide cost-effective solutions for Laser Diodes, ensuring timely deliveries around the world.

Part No. RLD65NZX1-00A
Manufacturer: ROHM
Category: Laser Diodes
Description: Laser Diodes 650NM RED SNGL MODE LASER
Datasheet: RLD65NZX1-00A Datasheet (PDF)
Price (USD)
1: USD 20.724 ea
Line Total: USD 20.72 
Availability : 442
  
Ship by Wed. 08 Oct to Fri. 10 Oct
QtyUnit Price
1$ 20.724
10$ 14.619
100$ 12.804
500$ 12.705

Availability 442
Ship by Wed. 08 Oct to Fri. 10 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 20.724
10$ 14.619
100$ 12.804
500$ 12.705

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RLD65NZX1-00A from our Laser Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RLD65NZX1-00A and other electronic components in the Laser Diodes category and beyond.

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650nm Red Single Mode Laser Diode RLD65NZX1 Datasheet Application Outline view Sensor Bar-code scanner Leveling Ranging Etc. Merit Single mode 5.6 metal stem Absolute Maximum Ratings (Tc=25C) Parameter Symbol Ratings Unit Optical output Po 10 mW LD Vr 2 V Reverse voltage PIN PD Vr(PD) 20 V Operating temp. Top -40 to 80 C Storage temp. Tstg -40 to 85 C Characteristics (Tc=25C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold current Ith 15 30 mA Operating current Iop mA Po=7mW 24 40 Operating voltage Vop Po=7mW 2.3 2.8 V Output efficiency W/A 2mW/(I(7mW)-I(5mW)) 0.50 0.85 1.20 Monitor current Im Po=7mW, Vr(PD)=15V 0.15 0.30 0.60 mA // deg. 7 9 13 Beam divergence Po=7mW 20 27 35 deg. // deg. -3 0 +3 Beam tolerance Po=7mW -4 0 +4 deg. Emission point XYZ m -100 0 +100 accuracy Lasing wavelength Po=7mW 655 663 670 nm Astigmatic difference As m NA=0.55, Po=3.5mW 2 10 Caution: and // are defined as full width at half maximum. Operation temperature is regulated by case temperature Tc RLD65NZX1 Datasheet Electrical Characteristics 7 40 50 60 70 25 80 10 5 6 9 4.5 8 4 5 7 3.5 4 6 3 5 2.5 3 4 2 3 1.5 2 2 1 1 0.5 1 0 0 0 204060 0 If mA 0 0 .1 0.2 0 .3 0.4 Im mA Optical Characteristics 50 60 1 40 80 70 25 0.9 100% 0.8 90% 80% 0.7 70% 0.6 60% 0.5 50% 0.4 40% 0.3 30% 0.2 20% 0.1 10% 0% 0 655 665 675 -60 -40 -20 0 20 40 60 Angle deg. nm * This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the ability of the whole product.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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