Product Information

RLD65PZX3-00A

RLD65PZX3-00A electronic component of ROHM

Datasheet
Laser Diodes 660NM RED SNGL MODE LASER

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 22.3445 ea
Line Total: USD 22.34

869 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
869 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 22.3445
10 : USD 15.2145
100 : USD 15.019
500 : USD 14.3405
2500 : USD 14.3405
10000 : USD 14.3405
25000 : USD 14.3405

     
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650nm Red Single Mode Laser Diode RLD65PZX3 Datasheet Application Outline view Sensor Bar-code scanner Leveling Ranging Etc. Merit Single mode 5.6 metal stem Absolute Maximum Ratings (Tc=25C) Parameter Symbol Ratings Unit Optical output Po 12 mW LD Vr 2 V Reverse voltage PIN PD Vr(PD) 20 V Operating temp. Top -10 to 70 C Storage temp. Tstg -40 to 85 C Characteristics (Tc=25C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold current Ith 25 35 mA Operating current Iop Po=10mW 42 55 mA Operating voltage Vop Po=10mW 2.3 2.7 V Output efficiency 3mW/(I(10mW)-I(7mW)) 0.4 0.6 1.0 W/A Monitor current Im Po=10mW, Vr(PD)=15V 0.08 0.20 0.50 mA // 6.0 8.5 12.0 deg. Beam divergence Po=10mW 24 28 34 deg. // -3 0 +3 deg. Beam tolerance Po=10mW -4 0 +4 deg. Emission point XYZ -100 0 +100 m accuracy Lasing wavelength Po=10mW 650 658 666 nm Astigmatic difference As NA=0.55, Po=3.5mW 5 10 m Caution: and // are defined as full width at half maximum. Operation temperature is regulated by case temperature Tc RLD65PZX3 Datasheet Electrical Characteristics 25 40 50 60 70 12 6 12 10 5 10 8 4 8 I-L 6 6 3 I-V 4 4 2 2 2 1 0 0 0 0 20 40 60 80 0 0.1 0.2 0.3 0.4 If mA Im mA Optical Characteristics 25 40 70 50 60 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 -60 -40 -20 0 20 40 60 650 655 660 665 670 FFP deg. nm * This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the ability of the whole product.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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