RLD84NZJ2-00A ROHM

RLD84NZJ2-00A electronic component of ROHM
RLD84NZJ2-00A ROHM
RLD84NZJ2-00A Laser Diodes
RLD84NZJ2-00A  Optoelectronics
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RLD84NZJ2-00A Laser Diodes across the USA, India, Europe, Australia, and various other global locations. RLD84NZJ2-00A Laser Diodes are a product manufactured by ROHM. We provide cost-effective solutions for Laser Diodes, ensuring timely deliveries around the world.

Part No. RLD84NZJ2-00A
Manufacturer: ROHM
Category: Laser Diodes
Description: Laser Diodes 840NM SNGL MODE LASER INVI
Datasheet: RLD84NZJ2-00A Datasheet (PDF)
Price (USD)
1: USD 48.125 ea
Line Total: USD 48.12 
Availability : 1222
  
Ship by Fri. 21 Nov to Tue. 25 Nov
QtyUnit Price
1$ 48.125
10$ 39.369
100$ 35.167

Availability 1222
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 48.125
10$ 39.369
100$ 35.167

   
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We are delighted to provide the RLD84NZJ2-00A from our Laser Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RLD84NZJ2-00A and other electronic components in the Laser Diodes category and beyond.

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840nm Invisible Single Mode Laser Diode RLD84NZJ2 Datasheet Application Outline view Motion sensor 3D depth sensor Etc. Merit Single mode 5.6 metal stem Absolute Maximum Ratings (Tc=25C) Parameter Symbol Ratings Unit Optical output Po 220 mW LD Vr 2 V Reverse voltage PIN PD Vr(PD) 20 V Operating temp. Top -10 to 60 C Storage temp. Tstg -40 to 85 C Characteristics (Tc=25C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold current Ith 40 60 mA Operating current Iop Po=200mW mA 250 350 Operating voltage Vop Po=200mW 2.4 2.8 V 50mW/ Output efficiency W/A 0.7 0.95 1.5 (I(200mW)-I(150mW)) Monitor current Im Po=200mW, Vr(PD)=5V 0.1 0.4 1 mA // deg. 7 9.5 12 Beam divergence Po=200mW 13 19 23 deg. // deg. -3 0 +3 Beam tolerance Po=200mW -4 0 +4 deg. Emission point XYZ m -100 0 +100 accuracy Lasing wavelength Po=200mW 832 842 852 nm Caution: and // are defined as full width at half maximum. Operation temperature is regulated by case temperature Tc RLD84NZJ2 Datasheet lectrical Characteristics 60 25 40 50 220 220 200 200 5 180 180 160 160 4 140 140 I-L 120 120 3 100 100 I-V 80 80 2 60 60 40 40 1 20 20 0 0 0 0 0.2 0.4 0.6 0.8 1 0 100 200 300 Im mA If mA OOOOppppttttiiiiccccaaaallll CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss 25 40 50 60 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 835 840 845 850 855 -60 -40 -20 0 20 40 60 nm FFP deg. * This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the ability of the whole product.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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