RPI-0128

DISTANCE : d (mm) RPI-0128 Photointerrupter, Ultraminiature SMD type Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Applications Forward current IF 30 mA DSC(Digital steal camera) Reverse voltage VR 5 V DVC(Digital video camera) Power dissipation PD 80 mW Digital handy phone Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Features Collector current IC 30 mA 1) Ultraminiature SMD type. Collector power dissipation PC 80 mW 2) Gap 1.2mm. Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +85 C Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.2 1.35 1.5 VIF=5mA IR 10 A VR=5V Reverse current Dark current ICEO 0.1 A VCE=10V Peak sensitivity wavelength P 800 nm IC1 5.0 25 mA VCE=5V, IF=20mA Collector current IC2 1.0 5 mA VCE=5V, IF=5mA Collector-emitter saturation voltage VCE(sat) 0.4 V IF=20mA, IC=0.1mA Rise time tr 10 s Response time VCC=5V, IF=20mA, RL=100 Fall time 10 s tf Cut-off frequency fC 1 MHz IF=5mA Non-coherent Infrared light emitting diode used. Peak light emitting wavelength P 850 nm VCC=5V, IC=1mA, RL=100 Response time tr tf 10 s This product is not designed to be protected against electromagnetic wave. Maximum sensitivity wavelength P 800 nm Electrical and optical characteristics curves 120 20 35 100 30 16 d 25 80 Ta=75Ta=75Ta=75CCC 12 505050CCC 20 252525CCC 60 000CCC 15 252525CCC 8 40 10 4 20 5 0 0 0 00.511.52 0 0.5 1.0 1.5 2.0 -25 0 25 50 75 100 DISTANCE : d (mm) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward distance ( ) Fig.2 Forward current falloff voltage 120 140 d 120 120 100 100 100 PD PC 80 IIIFFF=5mA=5mA=5mA 80 80 60 60 60 20mA20mA20mA 40 40 40 20 20 20 VCE=5V 0 0 0 20 0 20 40 60 80 100 -25 0 25 50 75 100 0 0.4 0.8 1.2 1.6 AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient distance ( ) dissipation vs. ambient temperature temperature RELATIVE COLLECTOR CURRENT : Ic (%) Output photo- Input (LED) Photo Infrared Transfer Output Input ( ) transistor light characteristics charac- charac- transistor emitter teristics teristics diode RELATIVE COLLECTOR CURRENT : Ic (%) POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%)Dimensions (Unit : mm) Notes: 1. Unspecified tolerance 2.50.15 shall be 0.2 . 2. Dimension in parenthesis are show for reference. 1.20.15 2-0.1 (0.2) C0.3 A Gate A-A Cross section A 2 3 1 4 0.9 2 Internal connection diagram Anode Collector Cathode Emitter 800 14 1000 VCC=5V 700 IC=0.1mA 12 tr 600 100 10 VCE=30V tf Ta=75C 500 VCE=20V 50C 8 10 VCE=10V 25C 400 0C 6 25C 300 1 4 200 0.1 2 VCE=5V 100 Ta=25C 0 0 25 0 25 50 75 100 110 100 0 5 10 15 20 FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (C) LOAD RESISTANCE : RL (k) Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs. forward current load resistance ambient temperature 16 Input VCC IF=20mA 14 12 15mA IF=5mA Input 10 Output 90% RL 8 10mA 10% Output 6 20mA td 4 tr tf 5mA td : Delay time 2 Rise time (time for output current to rise from t r : 10% to 90% of peak current) 0 02 46 8 10 t f : Fall time (time for output current to fall from 90% COLLECTOR TO EMITTER VOLTAGE: VCE (V) to 10% of peak current) 2010.07 Rev.B Fig.10 Output characteristics Fig.11 Response time measurement circuit COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 0.2 1.80.1 RESPONSE TIME : tr (s) 0.45 0.6 +0.1 1.60.1 0.6 0.05 -0.05 1.4 (0.34) Optical center DARK CURRENT : ICEO (nA) (0.65) (0.1)