Product Information

RPI-131

RPI-131 electronic component of ROHM

Datasheet
ROHM Semiconductor Optical Switches, Transmissive, Phototransistor Output 0.40mm slit width 0.7mA min., 5V

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2000
Multiples : 2000

Stock Image

RPI-131
ROHM

2000 : USD 0.4183
N/A

Obsolete
0 - WHS 2


Multiples : 2000

Stock Image

RPI-131
ROHM

N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

RPI-131
ROHM

1 : USD 1.0672
10 : USD 0.9078
100 : USD 0.693
500 : USD 0.6154
1000 : USD 0.4851
2500 : USD 0.4653
10000 : USD 0.459
25000 : USD 0.4442
50000 : USD 0.4305
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
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External dimensions (Unit : mm) RPI-131 Photointerrupter, Small type 4.2 Through hole 3.2 4-0.8 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Applications Forward current IF 50 mA Optical control equipment Reverse voltage VR 5 V Cameras Power dissipation PD 80 mW Gap Floppy disk drives 1.2 Cross-section A-A Collector-emitter voltage VCEO 30 V 0.4 C0.5 A Features Emitter-collector voltage VECO 4.5 V Optical axis center Collector current IC 30 mA 1) Ultra-small. 2) Minimal influence from stray light. Collector power dissipation PC 80 mW 3) Low collector-emitter saturation voltage. Operating temperature Topr 25 to +85 C Storage temperature Tstg 40 to +100 C Electrical and optical characteristics (Ta=25C) +0.1 1.5 -0 Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.3 1.6 VIF=50mA A Reverse current 10 A V IR R=5V Dark current ICEO 0.5 A VCE=10V 4-0.5 4-0.2 Peak sensitivity wavelength P 800 nm IC1 0.7 mA VCE=5V, IF=20mA Collector current (2.5) (3.2) IC2 0.2 mA VCE=5V, IF=5mA Collector-emitter saturation VCE(sat) 0.3 V IF=20mA, IC=0.3mA voltage Anode Collector Response time tr tf 10 s VCC=5V, IF=20mA, RL=100 fC Cut-off frequency 1 MHz Notes: IF=50mA 1. Unspecified tolerance Non-coherent Infrared light emitting diode used. Peak light emitting wavelength P 950 nm shall be 0.2 . VCC=5V, IC=1mA, RL=100 2. Dimension in parenthesis are Response time tr tf 10 s This product is not designed to be protected against electromagnetic wave. Cathode Emitter show for reference. P nm Maximum sensitivity wavelength 800 Electrical and optical characteristics curves 5 1000 Ta=25C 1000 50 25C VCC=5V 50 100 75C 4 25C 40 100 VR=10V 50C d 40 80 100 VR=20V 75C 3 VR=30V 30 RL=1k 10 60 30 2 RL=500 20 20 40 10 1 RL=100 1 20 10 10 0.1 0 0 1 0 0 20 0 20 40 60 80 100 25 0 25 50 75 100 0 12 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1020304050 0.1 1 10 100 DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (C) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (mA) AMBIENT TEMPERATURE : Ta (C) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs. distance ( ) Fig.2 Forward current falloff voltage forward current collector current ambient temperature 120 160 Input VCC 120 4 IF=25mA 140 100 100 120 3 20mA 80 PD PC Input 100 80 Output 90% 60 80 15mA RL 60 2 10% 60 Output 40 40 td 10mA 1 40 tr tf 20 20 td : Delay time 20 5mA t r : Rise time (time for output current to rise from 0 0 0 0 10% to 90% of peak current) 0 0.5121.5 20 0 20 40 60 80 100 40 20 0 20406080 100 0 24 6 8 10 t f : Fall time (time for output current to fall from 90% AMBIENT TEMPERATURE : Ta (C) DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (C) COLLECTOR TO EMITTER VOLTAGE : VCE (V) to 10% of peak current) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient dissipation vs. ambient temperature distance ( ) Fig.10 Output characteristics temperature Fig.11 Response time measurement circuit Infrared Output Transfer Output Input Photo light photo- Input(LED) charac- charac- charac- ( ) transistor emitter transistor teristics teristics teristics diode RELATIVE COLLECTOR CURRENT : Ic (%) RELATIVE COLLECTOR CURRENT : Ic (%) d POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD / Pc (mW) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : Ic (mA) (1.5) Min.5 5.2 4.2 2.8 1 1.3 RESPONSE TIME : t (s) (1.2) 2.5 DARK CURRENT : ID (nA) Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer s right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies toobjectiv criteria or aninforme (by MITI clause) on the basis ofcatch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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