RPI-130

DISTANCE : d (mm) RPI-130 Photointerrupter, Ultraminiature DIP type Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Applications Forward current IF 50 mA DSC(Digital steal camera) Reverse voltage VR 5 V DVC(Digital video camera) Power dissipation PD 80 mW Digital handy phone Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Features Collector current IC 30 mA 1) Ultraminiature DIP type. Collector power dissipation PC 80 mW 2) Gap 1.2mm. Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +85 C Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.45 1.75 VIF=20mA Reverse current IR 10 A VR=5V Dark current ICEO 0.1 A VCE=10V Peak sensitivity wavelength P 800 nm Collector current IC 2 10 mA VCE=5V, IF=10mA Collector-emitter saturation voltage VCE(sat) 0.4 V IF=20mA, IC=0.1mA Rise time tr 10 s Response time VCC=5V, IF=20mA, RL=100 Fall time 10 s tf fC Cut-off frequency 1 MHz IF=50mA Non-coherent Infrared light emitting diode used. P 850 nm Peak light emitting wavelength VCC=5V, IC=1mA, RL=100 Response time tr tf 10 s This product is not designed to be protected against electromagnetic wave. Maximum sensitivity wavelength P 800 nm Electrical and optical characteristics curves 20 120 18 25C 50 100 0C 16 25C 50C 14 80 40 75C 12 10 60 30 8 40 20 6 4 20 10 2 0 0 0 20 0 20 40 60 80 100 0 0.5 1 1.5 2 00.5 11.5 2 DISTANCE : d (mm) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward distance ( ) Fig.2 Forward current falloff voltage 140 120 120 120 100 100 100 PD PC 80 80 80 60 60 60 40 40 40 VCE=5V 20 20 20 IF=10mA 0 0 0 20 0 20 40 60 80 100 -25 0 25 50 75 100 0 0.5 1 1.5 AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient distance ( ) dissipation vs. ambient temperature temperature (%) RELATIVE COLLECTOR CURRENT : Ic Output Transfer Output Input photo- Input (LED) Photo Infrared ( ) transistor light characteristics charac- charac- transistor teristics teristics emitter RELATIVE COLLECTOR CURRENT : Ic (%) diode POWER DISSIPATION / COLLECTOR POWER DISSIPTIONP D/PC (mW) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%)Dimensions (Unit : mm) 0.7 Note) 1. Unspecified tolerance shall be 0.2. A 2. Dimension in parenthesis are shown for reference. A 3. 1 2-C0. 4 1. 5 1. 2 4-0. 15 4- 0. 3 (2. 0) (1. 3) Internal connection diagram (0. 3) Anode Colletor 1.4 (Optical center) Cathode Emitter A-A Cross section 20 800 1000 VCC=5V 18 700 IC=0.1mA 16 tr 600 100 14 VCE=30V tf 500 VCE=20V 12 10 VCE=10V 10 400 8 300 1 6 200 4 VCE=5V 0.1 100 2 Ta=25 0 0 25 0 255075 100 0 1020304050 110 100 AMBIENT TEMPERATURE : Ta (C) FORWARD CURRENT : IF (mA) LOAD RESISTANCE : RL (k) Fig.9 Dark current vs. Fig.7 Collector current vs. Fig.8 Response time vs. ambient temperature forward current load resistance 25 Input VCC IF=50mA 20 IF=40mA Input IF=30mA 15 Output 90% RL IF=20mA 10% Output 10 td IF=10mA tr tf 5 Delay time td : Rise time (time for output current to rise from t r : 10% to 90% of peak current) 0 Fall time (time for output current to fall from 90% t f : 02 46 8 10 to 10% of peak current) CORRECTOR TO EMITTER VOLTAGE : VCE(V) Fig.11 Output characteristics Fig.12 Response time measurement circuit 2010.10 Rev.C COLLECTOR CURRENT : Ic(mA) COLLECTOR CURRENT : IC (mA) 0.5 RESPONSE TIME : tr (s) (1.1) 0.7 1. 4 1.7 0.4 2. 0 (0. 65) 2.0 (0. 5) DARK CURRENT : ICEO (nA) (0. 35) ( 1 .5 )