Product Information

RPR-220C1N

RPR-220C1N electronic component of ROHM

Datasheet
ROHM Semiconductor Optical Switches, Reflective, Phototransistor Output REFLECTIVE PHTOSENSR

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 1.5385
10 : USD 1.3098
100 : USD 1.0464
500 : USD 0.9148
1000 : USD 0.7554
2500 : USD 0.7527
5000 : USD 0.7527
10000 : USD 0.7243
25000 : USD 0.6958
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Distance
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Packaging
Vf - Forward Voltage
Vr - Reverse Voltage
Sensing Method
Brand
Factory Pack Quantity :
Height
Length
Output Type
Termination Style
Wavelength
Width
Number Of Channels
Cnhts
Fall Time
Hts Code
If - Forward Current
Mxhts
Product Type
Rise Time
Subcategory
Taric
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Reflective photosensor (photoreflector) RPR-220 Datasheet Applications Outline Compact disc players Game machines Copiers Office automation equipment Features 1) A plastic lens is used for high sensitivity. 2) A built-in visible light filter minimizes the influence of stray light. 3) Lightweight and compact. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit I Forward current 50 mA F V Input (LED) Reverse voltage 5 V R P 80 mW Power dissipation D V 30 V Collector-emitter voltage CEO Output V 4.5 V Emitter-collector voltage ECO (photo- I 30 mA Collector current C transistor) P Collector power dissipation 80 mW C T Operating temperature 25 to 85 C opr T Storage temperature 30 to 85 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.03 - Rev.B 1/4Datasheet RPR-220 lElectrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =50mA Forward voltage - 1.34 1.6 V F F Input characteristics I V =5V Reverse current - - 10 mA R R Dark current I V =10V - - 0.5 mA CEO CE Output characteristics Peak sensitivity l - - 800 - nm p wavelength I V =2V, I =10mA * Collector current 0.08 0.3 0.8 mA C CE F Collector-emitter Transfer V I =20mA, I =0.1mA * saturation - 0.1 0.3 V CE(sat) F C characteristics voltage V =5V, I =20mA, CC F Response time trtf - 10 - ms R =100W * L Cut-off frequency f - 1 - MHz C I =50mA Infrared light F * Non-coherent Infrared emitter diode Peak light emitting light emitting diode used. l - 940 - nm p wavelength V =5V, I =1mA, R =100W CC C L Response time trtf - 10 - ms *This product is not designed to be protected against electromagnetic wave. Photo transistor Maximum sensitivity l - - 800 - nm p wavelength * Reflector object : Standard white paper. (Reflection ratio = 90%) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.03 - Rev.B 2/4

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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RHE
RHM
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ROHM Semiconductor

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