X-On Electronics has gained recognition as a prominent supplier of RQ6P015SPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ6P015SPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ6P015SPTR ROHM

RQ6P015SPTR electronic component of ROHM
RQ6P015SPTR ROHM
RQ6P015SPTR MOSFETs
RQ6P015SPTR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RQ6P015SPTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ6P015SPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.94 ea
Line Total: USD 0.94 
Availability - 9763
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1204
Ship by Fri. 27 Jun to Wed. 02 Jul
MOQ : 1
Multiples : 1
1 : USD 0.6492
10 : USD 0.576
30 : USD 0.5434
100 : USD 0.3393
500 : USD 0.3264
1000 : USD 0.3192

9763
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.94
10 : USD 0.71
100 : USD 0.4356
500 : USD 0.3696
1000 : USD 0.3278
3000 : USD 0.2915
6000 : USD 0.2904

7515
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 230
Multiples : 1
230 : USD 1.1349
304 : USD 0.858
500 : USD 0.585
1000 : USD 0.56
3000 : USD 0.4513
6000 : USD 0.3912

2347
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 446
Multiples : 1
446 : USD 0.5834
542 : USD 0.4804
1000 : USD 0.3994

2910
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 445
Multiples : 1
445 : USD 0.585
463 : USD 0.5616
500 : USD 0.5413
1000 : USD 0.5035
2500 : USD 0.4886

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ6P015SPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6P015SPTR and other electronic components in the MOSFETs category and beyond.

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RQ6P015SP Datasheet Pch -100V -1.5A Small Signal MOSFET llOutline SOT-457T V -100V DSS TSMT6 R (Max.) 470m DS(on) I 1.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking FC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160708 - Rev.003 RQ6P015SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 350 470 GS D V = -4.5V, I = -0.75A - 380 510 GS D Static drain - source *4 R V = -4.0V, I = -0.75A - 400 540 m DS(on) GS D on - state resistance V = 10V, I = 1.5A GS D - 610 - T = 125 j R Gate resistance f = 1MHz, open drain - 8.5 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160708 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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