X-On Electronics has gained recognition as a prominent supplier of RQ6P015SPTR MOSFET across the USA, India, Europe, Australia, and various other global locations. RQ6P015SPTR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RQ6P015SPTR ROHM

RQ6P015SPTR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RQ6P015SPTR
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET
Datasheet: RQ6P015SPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5038 ea
Line Total: USD 0.5

Availability - 1615
Ships to you between
Fri. 28 Jun to Wed. 03 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3123 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0354
10 : USD 0.8957
100 : USD 0.6076
500 : USD 0.5078
1000 : USD 0.3963

27877 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.7383
10 : USD 0.644
100 : USD 0.4554
500 : USD 0.3921
1000 : USD 0.3427
3000 : USD 0.3105
6000 : USD 0.3024
9000 : USD 0.2933
24000 : USD 0.2909

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ6P015SPTR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ6P015SPTR and other electronic components in the MOSFET category and beyond.

RQ6P015SP Datasheet Pch -100V -1.5A Small Signal MOSFET llOutline SOT-457T V -100V DSS TSMT6 R (Max.) 470m DS(on) I 1.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking FC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160708 - Rev.003 RQ6P015SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 350 470 GS D V = -4.5V, I = -0.75A - 380 510 GS D Static drain - source *4 R V = -4.0V, I = -0.75A - 400 540 m DS(on) GS D on - state resistance V = 10V, I = 1.5A GS D - 610 - T = 125 j R Gate resistance f = 1MHz, open drain - 8.5 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160708 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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