X-On Electronics has gained recognition as a prominent supplier of RRL035P03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRL035P03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRL035P03TR ROHM

RRL035P03TR electronic component of ROHM
RRL035P03TR ROHM
RRL035P03TR MOSFETs
RRL035P03TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. RRL035P03TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 3.5A
Datasheet: RRL035P03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7287 ea
Line Total: USD 0.73 
Availability - 5257
Ship by Wed. 14 May to Fri. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
194
Ship by Fri. 23 May to Wed. 28 May
MOQ : 1
Multiples : 1
1 : USD 0.7768
10 : USD 0.6084
30 : USD 0.5352
100 : USD 0.2989
500 : USD 0.2713
1000 : USD 0.255

5257
Ship by Wed. 14 May to Fri. 16 May
MOQ : 1
Multiples : 1
1 : USD 0.7287
10 : USD 0.4525
100 : USD 0.2691
500 : USD 0.2024
1000 : USD 0.1837
3000 : USD 0.154
9000 : USD 0.1408
24000 : USD 0.1375
45000 : USD 0.1342

   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Package / Case
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Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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We are delighted to provide the RRL035P03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRL035P03TR and other electronic components in the MOSFETs category and beyond.

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RRL035P03 Datasheet Pch -30V -3.5A Small Signal MOSFET llOutline SOT-363T V -30V DSS TUMT6 R (Max.) 50m DS(on) I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode. 3) Small surface mount package(TUMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking UF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160629 - Rev.001 RRL035P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -25 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3.5A - 36 50 GS D Static drain - source *4 R V = -4.5V, I = -1.7A - 52 72 m DS(on) GS D on - state resistance V = -4.0V, I = -1.7A - 58 81 GS D R Gate resistance f = 1MHz, open drain - 19 - G Forward Transfer *4 Y V = -10V, I = -3.5A 2.3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160629 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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