X-On Electronics has gained recognition as a prominent supplier of RRL035P03TR mosfet across the USA, India, Europe, Australia, and various other global locations. RRL035P03TR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RRL035P03TR

RRL035P03TR electronic component of ROHM
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See Product Specifications
Part No.RRL035P03TR
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 30V 3.5A
Datasheet: RRL035P03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4174 ea
Line Total: USD 0.42

Availability - 4335
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4335 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.36
100 : USD 0.2541
500 : USD 0.2036
1000 : USD 0.1702
3000 : USD 0.1472
9000 : USD 0.1472
24000 : USD 0.1438
45000 : USD 0.1403

1532 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 160
Multiples : 1
160 : USD 0.6644
250 : USD 0.6378
500 : USD 0.6148
1000 : USD 0.5947

3821 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 118
Multiples : 1
118 : USD 0.3445
200 : USD 0.3429
500 : USD 0.2892
1000 : USD 0.273
2000 : USD 0.2714
3000 : USD 0.26

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
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We proudly offer the RRL035P03TR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RRL035P03TR MOSFET.

RRL035P03 Datasheet Pch -30V -3.5A Small Signal MOSFET llOutline SOT-363T V -30V DSS TUMT6 R (Max.) 50m DS(on) I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode. 3) Small surface mount package(TUMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking UF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160629 - Rev.001 RRL035P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -25 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -3.5A - 36 50 GS D Static drain - source *4 R V = -4.5V, I = -1.7A - 52 72 m DS(on) GS D on - state resistance V = -4.0V, I = -1.7A - 58 81 GS D R Gate resistance f = 1MHz, open drain - 19 - G Forward Transfer *4 Y V = -10V, I = -3.5A 2.3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) 2 *3 Mounted on a FR4 (25250.8mm,Cu pad:625mm ) *4 Pulsed www.rohm.com 2/11 20160629 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHM
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