Product Information

RS1G150MNTB

RS1G150MNTB electronic component of ROHM

Datasheet
Trans MOSFET N-CH 40V 15A Automotive 8-Pin HSOP EP T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9491 ea
Line Total: USD 0.95

4366 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4366 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.9491
10 : USD 0.7885
100 : USD 0.6315
500 : USD 0.5494
1000 : USD 0.4601
2500 : USD 0.4395
5000 : USD 0.4395
10000 : USD 0.4226

2425 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 211
Multiples : 1
211 : USD 0.4728
250 : USD 0.4589
500 : USD 0.4498

     
Manufacturer
Product Category
Packaging
Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Continuous Drain Current
Type
Operating Temp Range
Pin Count
Polarity
Operating Temperature Classification
Drain-Source On-Volt
Package Type
Number Of Elements
Rad Hardened
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RS1G150MN Datasheet Nch 40V 43A Power MOSFET llOutline V 40V DSS R (Max.) 10.6m DS(on) HSOP8 I 43A D P 25W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G150MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 43 A c D Continuous drain current T = 25C I 15 A a D *2 I Pulsed drain current 60 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 15 A AS *3 E Avalanche energy, single pulse 17 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171018 - Rev.003 RS1G150MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 7.6 10.6 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 15A - 10.2 13.3 GS D Gate resistance R f=1MHz, open drain - 2.4 - G Forward Transfer *5 Y V = 10V, I = 15A 6 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171018 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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