X-On Electronics has gained recognition as a prominent supplier of RS1G150MNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RS1G150MNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RS1G150MNTB ROHM

RS1G150MNTB electronic component of ROHM
RS1G150MNTB ROHM
RS1G150MNTB MOSFETs
RS1G150MNTB  Semiconductors

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See Product Specifications
Part No. RS1G150MNTB
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 15A Automotive 8-Pin HSOP EP T/R
Datasheet: RS1G150MNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
302: USD 0.3875 ea
Line Total: USD 117.02 
Availability - 0
MOQ: 302  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.8641
10 : USD 0.7178
100 : USD 0.575
500 : USD 0.4914
1000 : USD 0.4189
2500 : USD 0.4002
5000 : USD 0.3936
10000 : USD 0.3847
25000 : USD 0.3837

0
Ship by Thu. 08 May to Wed. 14 May
MOQ : 15
Multiples : 1
15 : USD 7.1668

0
Ship by Thu. 08 May to Wed. 14 May
MOQ : 237
Multiples : 1
237 : USD 1.022

0
Ship by Thu. 08 May to Wed. 14 May
MOQ : 302
Multiples : 1
302 : USD 0.3875
500 : USD 0.3657

0
Ship by Thu. 08 May to Wed. 14 May
MOQ : 237
Multiples : 1
237 : USD 0.4554
250 : USD 0.4371
500 : USD 0.4213
1000 : USD 0.4076
2500 : USD 0.3956

   
Manufacturer
Product Category
Packaging
Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Continuous Drain Current
Type
Operating Temp Range
Pin Count
Polarity
Operating Temperature Classification
Drain-Source On-Volt
Package Type
Number Of Elements
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RS1G150MNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1G150MNTB and other electronic components in the MOSFETs category and beyond.

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RS1G150MN Datasheet Nch 40V 43A Power MOSFET llOutline V 40V DSS R (Max.) 10.6m DS(on) HSOP8 I 43A D P 25W D llInner circuit llFeatures 1) Low on - resistance 2) High power small mold package (HSOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RS1G150MN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 43 A c D Continuous drain current T = 25C I 15 A a D *2 I Pulsed drain current 60 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 15 A AS *3 E Avalanche energy, single pulse 17 mJ AS *1 P 25 W D Power dissipation *4 P 3.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171018 - Rev.003 RS1G150MN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 5.0 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 27.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) Gate threshold voltage D - -4.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 7.6 10.6 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 15A - 10.2 13.3 GS D Gate resistance R f=1MHz, open drain - 2.4 - G Forward Transfer *5 Y V = 10V, I = 15A 6 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20171018 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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