Product Information

RSB33F2FHT106

RSB33F2FHT106 electronic component of ROHM

Datasheet
Zener Diodes 29.7-36.3V 200mW SOT-323 1mA

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5412 ea
Line Total: USD 0.54

1141 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1144 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.4903
10 : USD 0.3502
100 : USD 0.1582
1000 : USD 0.1232
3000 : USD 0.1111
9000 : USD 0.0978
24000 : USD 0.0978
45000 : USD 0.0966
99000 : USD 0.0917

     
Manufacturer
Product Category
Pd - Power Dissipation
Maximum Operating Temperature
Package / Case
Packaging
Qualification
Brand
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Data Sheet AEC-Q101 Qualified Bi direction ESD Protection Diode RSB33F2FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) ESD Protection 1.3 2.00.2 0.30.1 0.150.05 Each lead has same dimension 0.65 (3) Features 1)Small mold type. (UMD3) 2)High reliability. 0.8MIN. 3)Bi-directionality. 0 0.1 (2) (1) UMD3 0.65 0.65 0.70.1 1.30.1 Constructions 0.90.1 Silicon epitaxial planer Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot(year week factory) Taping dimensions (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation(*) Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C (*)Total two elements Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =1mA Zener voltage 29.7 - 36.3 V Z Z Reverse current I - - 0.1 V =25V R R V =0V , f=1MHz Junction capacitance Ct - - 30 pF R *Zener voltage (Vz) shall be measured at 40ms after loading current. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/4 1.250.1 2.10.1 0.1Min 0.9MIN. 2.40.1 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6Data Sheet RSB33F2FH 10 10 apply voltage apply voltage Ta=150C 1 1 Ta=25C Ta=150C Ta=25C Ta=125C 0.1 0.1 Ta=25C Ta=125C Ta=25C Ta=75C Ta=75C 0.01 0.01 25 30 35 40 45 25 30 35 40 45 ZENER VOLTAGE:Vz(V) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) Vz-Iz CHARACTERISTICS(2) 1000 1000 Ta=150C apply voltage 100 100 Ta=150C 10 10 Ta=125C Ta=125C 1 1 Ta=75C 0.1 0.1 Ta=75C apply voltage Ta=25C 0.01 0.01 Ta=25C 0.001 0.001 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGEV (V) REVERSE VOLTAGEV (V) R R V -I CHARACTERISTICS(1) V -I CHARACTERISTICS(2) R R R R 100 100 f=1MHz f=1MHz apply voltage apply voltage 10 10 1 1 0 5 10 15 20 25 0 5 10 15 20 25 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R V -Ct CHARACTERISTICS(1) V -Ct CHARACTERISTICS(2) R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) R CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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