RSB39VTE-17

Data Sheet Bi direction ESD Protection Diode RSB39V Applications Dimensions (Unit : mm) Land size figure (Unit : mm) ESD Protection 1.250.1 0.10.1 0.05 0.9MIN. Features 1)Small mold type. (UMD2) 2)High reliability. 3)Bi-directionality. UMD2 Constructions Structure 0.70.2 0.30.05 0.1 Silicon epitaxial planer ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) Taping dimensions (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 4.00.1 1.05 1.400.1 1.00.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation Pd 200 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V Zener voltage 35.1 - 42.9 V I =1mA Z Z Reverse current I - - 0.1 A V =30V R R V =0V , f=1MHz Junction capacitance Ct - - 30 pF R *Zener voltage (Vz)shall be measured at 40ms after loading current. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/4 1.70.1 2.50.2 3.50.05 1.750.1 0.8MIN. 2.75 8.00.2 2.80.1 2.1Data Sheet RSB39V 10 10 apply voltage apply voltage Ta=150C Ta=150C 1 1 Ta=125C Ta=75C Ta=125C 0.1 Ta=25C 0.1 Ta=25C Ta=75C Ta=25C Ta=25C 0.01 0.01 25 30 35 40 45 25 30 35 40 45 ZENER VOLTAGE:Vz(V) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) Vz-Iz CHARACTERISTICS(2) 10000 10000 apply voltage apply voltage Ta=150C 1000 1000 Ta=150C 100 100 Ta=125C 10 10 Ta=125C Ta=75C 1 1 Ta=75C Ta=25C 0.1 0.1 Ta=25C 0.01 0.01 0 10 20 30 0 10 20 30 REVERSE VOLTAGEV (V) REVERSE VOLTAGEV (V) R R V -I CHARACTERISTICS(1) V -I CHARACTERISTICS(2) R R R R 100 100 f=1MHz f=1MHz 10 10 apply voltage apply voltage 1 1 0 1 2 3 4 0 1 2 3 4 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R V -Ct CHARACTERISTICS(1) V -Ct CHARACTERISTICS(2) R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF)