RSB6.8CST2R

ESD Protection diode RSB6.8CS z Land size figure (Unit : mm) z Application z Dimensions (Unit : mm) ESD Protection, bi direction 0.55 z Features 1) Ultra small mold type. (VMN2) 2) High reliability. 3) Bi chip-mounter, automatic mounting is possible. VMN2 z Construction Silicon epitaxial planar z Structure z Taping specifications(Unit : mm) z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Peak pulse power (tp=101000us) 10 Ppk W Power dissipation 100 PmW Junction temperature 150 Tj C Storage temperature -55 to +150 Tstg C Operating temperature -55 to +150 Topor C z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V I =1mA 5.78 - 7.82 V z Z Reverse current I - - 0.5 A V =3.5V R R Capacitance between terminals V =0V , f=1MHz Ct - 15 - pF R www.rohm.com 2009.12 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/2 0.45 0.45 0.5RSB6.8CS Data Sheet z Electrical characteristics curves 10000 1 100 Ta=125C Ta=150C f=1MHz 1000 100 0.1 Ta=75C 10 1 Ta=25C 0.01 10 0.1 Ta=-25C 0.01 Ta=150C 0.001 0.001 Ta=25C Ta=125C 0.0001 Ta=-25C Ta=75C 0.0001 0.00001 1 01234 56789 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5 ZENER VOLTAGE : Vz(mV) REVERSE VOLTAGE : V (V) R REVERSE VOLTAGE : V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R 10 6.9 50 Ta=25C Ta=25C 9 Ta=25C 45 V =3.5V f=1MHz Iz=1mA R 8 6.8 40 V =0V n=30pcs n=30pcs R 7 n=10pcs 35 6 6.7 30 5 25 4 6.6 20 3 15 AVE:0.9344n 2 6.5 A 10 AVE:14.95pF AVE:6.693V 1 5 0 6.4 0 Vz DISRESION MAP Ct DISRESION MAP I DISRESION MAP R 1000 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA I =100mA F time 1ms 300 10 0.001 0.01 0.1 1 10 100 1000 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. 2/2 2009.12 - Rev.A TRANSIENT ZENER CURRENT : Iz(mA) ZENER VOLTAGE : Vz() THAERMAL IMPEDANCE : Rth (C/W) REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) R CAPACITANCE BETWEEN CAPACITANCE BETWEENTERMINALS : TERMINALS:Ct(pF) Ct(pF)