Product Information

RSB6.8JS2FHT2R

RSB6.8JS2FHT2R electronic component of ROHM

Datasheet
ESD Suppressors TVS Diodes ZENER DIODE
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6221 ea
Line Total: USD 0.62

7750 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7750 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.6221
10 : USD 0.491
100 : USD 0.3703
500 : USD 0.3071
1000 : USD 0.2369
2500 : USD 0.2357
8000 : USD 0.2219
24000 : USD 0.2173
48000 : USD 0.2139

7760 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 221
Multiples : 1
221 : USD 0.4147
250 : USD 0.4025
500 : USD 0.3916
1000 : USD 0.3837

Read More Specifications

     
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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Ultra Low Capacitance ESD Protection Diode RSB6.8JS2FH RSD6.8JS2 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 1 .6 0 .1 0 .2 2 0 .0 5 0 .1 3 0 .0 5 lFeatures 1)Ultra small mold type. (EMD6) 2)Ultra Low Capacitance 3)Bi direction 4)High reliability 0 0 .1 EMD6 lConstruction lStructure (6) (5) (4) 1 .0 0 .1 0 .5 0 .0 5 Silicon epitaxial planer ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) (1) (2) (3) *Please make 3 and 6 Pin open in circuit upon lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation 150 P mW/Total Junction temperature Tj 150 C Storage temperature C Tstg -55 to +150 lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V Zener voltage 6.0 - 8.0 V I =5mA Z Z I V =3.5V Reverse current - - 0.50 A R R Capacitance between terminals C - 1 - pF f=1MHz,V =0V R t *Rating of per diode. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 1/3 1 .2 0 .1 1 .6 0 .1 Data Sheet RSB6.8JS2FH 10 100000 10000 Ta=125 C Ta=-25 C 1 1000 Ta=75 C Ta=125 C 100 Ta=25 C Ta=75 C 0.1 10 Ta=25 C 1 0.01 0.1 6.5 7 7.5 8 8.5 0 1 2 3 4 5 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGE V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R 8 10 f=1MHz 7.95 Ta=25 C I =5mA Z 7.9 n=30pcs 7.85 7.8 1 7.75 AVE:7.64V 7.7 7.65 7.6 7.55 0.1 7.5 0 1 2 3 4 5 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 5 2 4.5 1.8 Ta=25 C Ta=25 C f=1MHz V =3.5V R 4 1.6 n=30pcs V =0V R n=10pcs 3.5 1.4 3 1.2 AVE:1.16pA 1 2.5 AVE:1.4pF 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 0 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.09 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (pA) R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) ZENER VOLTAGE:Vz( ) CAPACITANCE BETWEENTERMINALS:Ct(pF) REVERSE CURRENT:I (pA) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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