RSBC6.8CSFHT2RA ROHM

Data Sheet AEC-Q101 Qualified Bi direction ESD Protection diode RSBC6.8CSFH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) ESD Protection,bi direction 0.160.05 0.55 0.60.05 Features 1)Ultra small mold type.(VMN2) 2)Ultra low capacitance. 3)High reliability. VMN2 0.156 Construction 0.370.03 0.350.1 Silicon epitaxial planar Structure ROHM : VMN2 dot (year week factory) + day Taping dimensions (Unit : mm) 1.55 0.20.05 40.1 20.05 0 .5 0.52 20.05 0.70.05 4.00.1 Absolute maximum ratings (Ta=25 C) Parameter Limits Symbol Unit Power dissipation Pd 100 mW Junction temperature 150 Tj C Storage temperature Tstg 55 to +150 C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V I =5mA 6.62 - 7.24 V z Z Reverse current I - - 0.5 A V =3.5V R R V =0V , f=1MHz Capacitance between terminals Ct - 1.0 - pF R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/3 1.10.05 0.90.05 1.00.05 0.45 0.45 3.50.05 1.750.1 8.00.2 0.5Data Sheet RSBC6.8CSFH 10 10000 Ta=150C 1000 Ta=25C 1 Ta=125C Ta=125C Ta=75C 100 Ta=150C 0.1 10 Ta=75C Ta=25C 0.01 1 6 6.5 7 7.5 0 1 2 3 4 5 REVERSE VOLTAGEV (V) R ZENER VOLTAGE:Vz(V) V -I CHARACTERISTICS R R Vz-Iz CHARACTERISTICS 10 10 f=1MHz Ta=25C I =5mA Z n=30pcs 9 8 1 7 AVE:7.09V 6 0.1 5 0 1 2 3 4 5 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 2 16 Ta=25C Ta=25C 1.8 14 f=1MHz V =3.5V R 1.6 V =0V n=30pcs R n=10pcs 12 1.4 AVE:13.4pA 10 1.2 AVE:1.47pF 1 8 0.8 6 0.6 4 0.4 2 0.2 0 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.11 - Rev.A CAPACITANCE BETWEEN ZENER CURRENT:Iz(mA) REVERSE CURRENT:I (pA) R TERMINALS:Ct(pF) CAPACITANCE REVERSE CURRENT:I (pA) R BETWEENTERMINALS:Ct(pF) ZENER VOLTAGE:Vz(V)