Data Sheet 4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 <SOT-428> 0.5 Features 1) Low on-resistance. 2) 4V drive. 0.75 3) High power package(CPT3). 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 2500 2 RSD080N06 (1) Gate (1) (2) (3) (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS Continuous I 8A D Drain current *1 Pulsed I 16 A DP Continuous I 8A Source current S (Body Diode) *1 Pulsed I 16 A SP *2 Power dissipation P 15 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (ch-c) 8.33 C / W * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New Designs 0.9 5.5 1.5 0.8Min. 1.5 2.5 9.5Data Sheet RSD080N06 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -57 80 I =8A, V =10V D GS Static drain-source on-state * R DS (on) -70 98 m I =8A, V =4.5V D GS resistance - 78 109 I =8A, V =4.0V D GS * Forward transfer admittance l Y l 4.8 - - S V =10V, I =8A fs DS D Input capacitance C - 380 - pF V =10V iss DS Output capacitance C - 90 - pF V =0V oss GS Reverse transfer capacitance C - 50 - pF f=1MHz rss Turn-on delay time t -9 - nsV 30V, I =4A ** d(on) DD D Rise time t - 13 - ns V =10V ** r GS Turn-off delay time t - 30 - ns R =7.5 ** d(off) L Fall time t ** - 10 - ns R =10 f G Total gate charge Q ** - 9.4 - nC V 30V, I =8A g DD D Gate-source charge Q - 1.8 - nC V =10V ** gs GS Gate-drain charge Q - 2.3 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =8A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Not Recommended for New Designs