X-On Electronics has gained recognition as a prominent supplier of VP2110K1-G mosfet across the USA, India, Europe, Australia, and various other global locations. VP2110K1-G mosfet are a product manufactured by Microchip. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

VP2110K1-G

VP2110K1-G electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.VP2110K1-G
Manufacturer: Microchip
Category:MOSFET
Description: Transistor: P-MOSFET; unipolar; -100V; -0.5A; 360mW; SOT23-3
Datasheet: VP2110K1-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8165 ea
Line Total: USD 0.82

Availability - 5242
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.7125
6000 : USD 0.7075
12000 : USD 0.7025
24000 : USD 0.6975

1619 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0635
10 : USD 1.033
25 : USD 0.8688
100 : USD 0.7882
250 : USD 0.7803
500 : USD 0.7722
1000 : USD 0.7645

2225 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1407
25 : USD 0.9126
100 : USD 0.8357
3000 : USD 0.7881

5242 - WHS 4


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8165
25 : USD 0.6865
100 : USD 0.6371

11640 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 1.0292
6000 : USD 1.0024
12000 : USD 0.9767

1619 - WHS 6


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 15
Multiples : 1
15 : USD 1.033
25 : USD 0.8688
100 : USD 0.7882
250 : USD 0.7803
500 : USD 0.7722
1000 : USD 0.7645

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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We proudly offer the VP2110K1-G MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the VP2110K1-G MOSFET.

VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2110 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the Excellent thermal stability high input impedance and positive temperature coefcient Integral source-to-drain diode inherent in MOS devices. Characteristic of all MOS High input impedance and high gain structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Ampliers input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package Options DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-236AB (SOT-23) Die* () (mA) VP2110 VP2110K1-G VP2110ND -100 12 -500 -G indicates package is RoHS compliant (Green) * MIL visual screening available Pin Conguration DRAIN SOURC E Absolute Maximum Ratings GATE TO-236AB (SOT-23) (K1) Parameter Value Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS W = Code for Week Sealed Gate-to-source voltage 20V P1AW = Green Packaging O O Operating and storage temperature -55 C to +150 C O Package may or may not include the following marks: Si or Soldering temperature* 300 C TO-236AB (SOT-23) (K1) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVP2110 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) -120 -400 0.36 200 350 -120 -400 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-Source breakdown voltage -100 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -1.5 - -3.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 5.8 6.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero Gate voltage Drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A I On-state Drain current -0.5 -1.0 - A V = -10V, V = -25V D(ON) GS DS - 11 15 V = -5.0V, I = -100mA GS D R Static Drain-to-Source on-state resistance DS(ON) - 9.0 12 V = -10V, I = -500mA GS D O R Change in R with temperature - 0.55 1.0 %/ C V = -10V, I = -500mA DS(ON) DS(ON) GS D G Forward transductance 150 200 - mmho V = -25V, I = -500mA FS DS D C Input capacitance - 45 60 ISS V = 0V, GS C Common Source output capacitance - 22 30 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 8.0 RSS t Turn-on delay time - 4.0 5.0 d(ON) V = -25V, DD t Rise time - 5.0 8.0 r I = -500mA, ns D t Turn-off delay time - 5.0 9.0 d(OFF) R = 25 GEN t Fall time - 4.0 8.0 f V Diode forward voltage drop - -1.2 -2.0 V V = 0V, I = -500mA SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = -500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT -10V R 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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