X-On Electronics has gained recognition as a prominent supplier of RSH070N05TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSH070N05TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSH070N05TB1 ROHM

RSH070N05TB1 electronic component of ROHM
RSH070N05TB1 ROHM
RSH070N05TB1 MOSFETs
RSH070N05TB1  Semiconductors

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See Product Specifications
Part No. RSH070N05TB1
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 45 V 7A (Ta) 2W (Ta) Surface Mount 8-SOP
Datasheet: RSH070N05TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.325 ea
Line Total: USD 1.32 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 1
Multiples : 1
1 : USD 2.6592
10 : USD 2.2938
100 : USD 1.7883
500 : USD 1.4773
1000 : USD 1.1663

0
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 1
Multiples : 1
1 : USD 2.6592
10 : USD 2.2938
100 : USD 1.7883
500 : USD 1.4773
1000 : USD 1.1663

0
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 1.1289
5000 : USD 1.0341
12500 : USD 0.9953

0
Ship by Thu. 03 Jul to Wed. 09 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 0.5659
5000 : USD 0.5564
10000 : USD 0.5468
15000 : USD 0.5373
20000 : USD 0.5277

0
Ship by Tue. 01 Jul to Thu. 03 Jul
MOQ : 1
Multiples : 1
1 : USD 1.325
10 : USD 1.0236
100 : USD 0.6842
500 : USD 0.5764
1000 : USD 0.5412
2500 : USD 0.4983

0
Ship by Tue. 01 Jul to Thu. 03 Jul
MOQ : 1
Multiples : 1
1 : USD 1.7785
10 : USD 1.4213
36 : USD 0.5364
99 : USD 0.5075

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Factory Pack Quantity :
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSH070N05TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSH070N05TB1 and other electronic components in the MOSFETs category and beyond.

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RSH070N05 Datasheet Nch 45V 7A Power MOSFET llOutline V 45V DSS SOP8 R (Max.) 25m DS(on) I 7.0A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RSH070N05 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 7.0 A D *1 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170117 - Rev.001 RSH070N05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 7A - 18 25 GS D Static drain - source *4 R V = 4.5V, I = 7A - 23 32 m DS(on) GS D on - state resistance V = 4.0V, I = 7A - 25 35 GS D R Gate resistance f = 1MHz, open drain - 3.2 - G Forward Transfer *4 Y V = 10V, I = 7A 6.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170117 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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