RSR015P06HZGTL ROHM

RSR015P06HZGTL electronic component of ROHM
RSR015P06HZGTL ROHM
RSR015P06HZGTL MOSFETs
RSR015P06HZGTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSR015P06HZGTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR015P06HZGTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RSR015P06HZGTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -60V -1.5A SMALL SIGNAL MO
Datasheet: RSR015P06HZGTL Datasheet (PDF)
Price (USD)
1: USD 1.0775 ea
Line Total: USD 1.08 
Availability : 0
  
QtyUnit Price
1$ 1.0775
10$ 0.6762
100$ 0.3927
500$ 0.3157
1000$ 0.2904
3000$ 0.2574
6000$ 0.2376
9000$ 0.2277

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9696
10$ 0.7871
100$ 0.5233
500$ 0.412
1000$ 0.3268


Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0775
10$ 0.6762
100$ 0.3927
500$ 0.3157
1000$ 0.2904
3000$ 0.2574
6000$ 0.2376
9000$ 0.2277

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSR015P06HZGTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR015P06HZGTL and other electronic components in the MOSFETs category and beyond.

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RSR015P06HZG Datasheet Pch -60V -1.5A Small Signal MOSFET llOutline SOT-346T V -60V DSS SC-96 R (Max.) 280m DS(on) TSMT3 I 1.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (TSMT3) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking SK llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -60 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6.0 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180323 - Rev.001 RSR015P06HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -60 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -60V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.2 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 200 280 GS D Static drain - source *4 R V = -4.5V, I = -1.5A - 240 340 m DS(on) GS D on - state resistance V = -4.0V, I = -1.5A - 255 360 GS D R Gate resistance f = 1MHz, open drain - 12 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.8 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic boad (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180323 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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