RSR025N05FRA Nch 45V 2.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline V TSMT3 45V DSS (3) R (Max.) 100mW DS(on) (1) I 2.5A D P 1.0W (2) D lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters, Relay drive Type Basic ordering unit (pcs) 3,000 Taping code TL Marking ZF lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS *1 Continuous drain current I 2.5 A D *2 Pulsed drain current A I 10 D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse E 4.8 mJ AS *4 0.54 W P D Power dissipation *5 P 1.0 W D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RSR025N05FRA lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - ambient R - - 125 C/W thJA *5 Thermal resistance, junction - ambient R - - 231 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 42 - mV/C temperature coefficient T referenced to 25C j I V = 45V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 3.0 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - -4.2 - mV/C temperature coefficient T referenced to 25C j V =10V, I =2.5A - 70 100 GS D V =4.5V, I =2.5A - 95 150 GS D Static drain - source *6 R m W DS(on) on - state resistance V =4.0V, I =2.5A - 105 160 GS D V =10V, I =2.5A, T =125C - 110 154 GS D j R Gate input resistannce f = 1MHz, open drain - 7 - W G *6 Transconductance V = 10V, I = 2.5A 2.0 4.2 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 L 1mH, V = 25V, Rg = 25 W, starting T = 25C DD j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (12200.8mm) *6 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11