RSR025N05TL ROHM

RSR025N05TL electronic component of ROHM
RSR025N05TL ROHM
RSR025N05TL MOSFETs
RSR025N05TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSR025N05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR025N05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RSR025N05TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 45V 2.5A 3-Pin TSMT T/R
Datasheet: RSR025N05TL Datasheet (PDF)
Price (USD)
767: USD 0.3393 ea
Line Total: USD 260.24 
Availability : 0
  
QtyUnit Price
767$ 0.3393
948$ 0.2743

Availability 3036
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.12
10$ 0.822
100$ 0.5115
500$ 0.4136
1000$ 0.3839
3000$ 0.3432
6000$ 0.3322
9000$ 0.319


Availability 776
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 767
Multiples : 1
QtyUnit Price
767$ 0.3393
948$ 0.2743

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
LoadingGif
 
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We are delighted to provide the RSR025N05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR025N05TL and other electronic components in the MOSFETs category and beyond.

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RSR025N05 Datasheet Nch 45V 2.5A Power MOSFET llOutline TSMT3 V 45V DSS R (Max.) 100m DS(on) I 2.5A D SC-96 P 0.54W D SOT-346T llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters, Relay drive Basic ordering unit (pcs) 3000 Taping code TL Marking ZF llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS *1 I Continuous drain current 2.5 A D *2 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 20 V GSS *3 E Avalanche energy, single pulse 4.8 mJ AS *4 P 0.54 W D Power dissipation *5 P 1 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150730 - Rev.001 RSR025N05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 125 /W thJA Thermal resistance, junction - ambient *5 R - - 231 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 42 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 1.0 - 3.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.2 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 2.5A - 70 100 GS D V = 4.5V, I = 2.5A - 95 150 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4V, I = 2.5A - 105 160 GS D V = , I = - - - GS D Gate input resistance R f = 1MHz, open drain - 7 - G Forward Transfer *6 Y V = 10V, I = 2.5A 2 4.2 - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 1H, V = 25V, R = 25, starting T = 25C DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (12200.8mm) *6 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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