Product Information

RTQ035P02FHATR

RTQ035P02FHATR electronic component of ROHM

Datasheet
MOSFET, AUTO, P-CH, -20V, -3.5A, TSMT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7251 ea
Line Total: USD 0.73

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 1
5 : USD 0.7144
10 : USD 0.5684
100 : USD 0.4239
500 : USD 0.3603
1000 : USD 0.2863
5000 : USD 0.2547

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

RTQ035P02FHA RTQ035P02 Transistor AEC-Q101 Qualified 2.5V Drive Pch MOS FET RTQ035P02FHA RTQ035P02 z External dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive.(2.5V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TL z Applications DC-DC converter z Packaging specifications z Equivalent circuit (6) (5) (4) Package Taping Code TR Type Basic ordering unit 3000 2 (pieces) RTQ035P02 RTQ035P02FHA 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 20 V Gatesource voltage VGSS 12 V 3.5 Continuous ID A Drain current 1 17.5 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle 1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RTQ035P02FHA RTQ035P02 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions IGSS 10 A VGS=12V, VDS=0V Gate-source leakage Drain-source breakdown voltage V(BR)DSS 20 V ID=1 , VmA, GS=0V IDSS 1 A VDS=20V, VGS=0V Zero gate voltage drain current mA Gate threshold voltage 0.7 2.0 V VDS=10V, ID=1 VGS(th) 50 65 m ID=3.5A, VGS=4.5V 55 70 m ID=3.5A, VGS=4V Static drain-source on-state RDS(on) resistance 80 100 m ID=1.75A, VGS=2.5V Foward transfer admittance Yfs 3.5 S VDS=10V, ID=3.5A Input capacitance Ciss 1200 pF VGS=0V VDS=10V, Output capacitance Coss 200 pF f=1MHz Reverse transfer capacitance Crss 130 pF Turn-on delay time td(on) 16 ns ID=2A Rise time tr 40 ns VDD 15V VGS=4.5V Turn-off delay time td(off) 55 ns RL=7.5 RG=10 Fall time tf 30 ns Total gate charge Qg 10.5 nC VDD 15V Gate-source charge Qgs 2.0 nC VGS=4.5V ID=3.5A Qgd 3.5 nC Gate-drain charge PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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