X-On Electronics has gained recognition as a prominent supplier of RTR025N05TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTR025N05TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTR025N05TL ROHM

RTR025N05TL electronic component of ROHM
RTR025N05TL ROHM
RTR025N05TL MOSFETs
RTR025N05TL  Semiconductors

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See Product Specifications
Part No. RTR025N05TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET N Chan, 45V, 2.5A
Datasheet: RTR025N05TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3052 ea
Line Total: USD 1.53 
Availability - 257
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
257
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 5
Multiples : 5
5 : USD 0.3052
50 : USD 0.243
150 : USD 0.1623
500 : USD 0.1237
3000 : USD 0.0951
6000 : USD 0.0891

2254
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6863
10 : USD 0.535
100 : USD 0.3487
500 : USD 0.2684
1000 : USD 0.2398
3000 : USD 0.2101
6000 : USD 0.198
9000 : USD 0.1925

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTR025N05TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTR025N05TL and other electronic components in the MOSFETs category and beyond.

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RTR025N05 Datasheet Nch 45V 2.5A Small Signal MOSFET llOutline SOT-346T V 45V DSS SC-96 R (Max.) 130m DS(on) TSMT3 I 2.5A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT3) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking PW llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 2.5 A D *1 I Pulsed drain current 10 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170426 - Rev.003 Not Recommended for New Designs RTR025N05 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 95 130 GS D Static drain - source *4 R V = 4.0V, I = 2.5A - 100 140 m DS(on) GS D on - state resistance V = 2.5V, I = 2.5A - 125 175 GS D R Gate resistance f = 1MHz, open drain - 9.2 - G Forward Transfer *4 Y V = 10V, I = 2.5A 2.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20170426 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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