X-On Electronics has gained recognition as a prominent supplier of HAT2240C-EL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. HAT2240C-EL-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HAT2240C-EL-E Renesas

HAT2240C-EL-E electronic component of Renesas
HAT2240C-EL-E Renesas
HAT2240C-EL-E MOSFETs
HAT2240C-EL-E  Semiconductors

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See Product Specifications
Part No. HAT2240C-EL-E
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 2.5A 6-Pin CMFPAK T/R
Datasheet: HAT2240C-EL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
67: USD 0.387 ea
Line Total: USD 25.93 
Availability - 0
MOQ: 67  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 15 May to Wed. 21 May
MOQ : 67
Multiples : 1
67 : USD 0.387
100 : USD 0.3358
500 : USD 0.2782
1000 : USD 0.2633

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HAT2240C-EL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HAT2240C-EL-E and other electronic components in the MOSFETs category and beyond.

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Data Sheet HAT2240C R07DS1184EJ0500 (Previous: REJ03G1241-0400) Silicon N Channel MOS FET Rev.5.00 Mar 19, 2014 Power Switching Features Low on-resistance R = 75 m typ.(at V = 4.5 V) DS(on) GS Low drive current High density mounting 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) 2 3 4 5 Indexband D D D D 1. Source 4 5 2. Drain 6 3. Drain 4. Drain 6 3 G 5. Drain 2 1 6. Gate S 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V 12 V GSS Drain current I 2.5 A D Note1 Drain peak current I 10 A D (pulse) Body - drain diode reverse drain current I 2.5 A DR Note2 Channel dissipation Pch 900 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) R07DS1184EJ0500 Rev.5.00 Page 1 of 6 Mar 19, 2014 HAT2240C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V 12 I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I 10 A V = 10 V, V = 0 GSS GS DS Drain to source leak current I 1 A V = 60 V, V = 0 DSS DS GS Gate to source cutoff voltage V 0.4 1.4 V V = 10 V, I = 1 mA GS(off) DS D Note3 Drain to source on state resistance R 75 98 m I = 1.3 A, V = 4.5 V DS(on) D GS Note3 R 85 119 m I = 1.3 A, V = 2.5 V DS(on) D GS Note3 Forward transfer admittance y 3.3 5 S I = 1.3 A, V = 10 V fs D DS Input capacitance Ciss 590 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 60 pF Reverse transfer capacitance Crss 35 pF Total gate charge Qg 6 nC V = 10 V, V = 4.5 V DD GS I = 2.5 A D Gate to source charge Qgs 1.2 nC Gate to drain charge Qgd 1.4 nC Turn - on delay time t 17 ns I = 1.3 A d(on) D V = 4.5 V, V = 10 V Rise time t 50 ns GS DD r R = 7.7 , Rg = 4.7 L Turn - off delay time t 41 ns d(off) Fall time t 4 ns f Note3 Body - drain diode forward voltage V 0.8 1.1 V I = 2.5 A, V = 0 DF F GS Notes: 3. Pulse test R07DS1184EJ0500 Rev.5.00 Page 2 of 6 Mar 19, 2014

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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