RUF020N02TL ROHM

RUF020N02TL electronic component of ROHM
RUF020N02TL ROHM
RUF020N02TL MOSFETs
RUF020N02TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RUF020N02TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RUF020N02TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.RUF020N02TL
Manufacturer:ROHM
Category:MOSFETs
Description:ROHM Semiconductor MOSFET Trans MOSFET N-CH 20V 2A
Datasheet:RUF020N02TL Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
600: USD 0.4336 ea
Line Total: USD 260.16 
Availability : 0
  
QtyUnit Price
600$ 0.4336
858$ 0.3032
1067$ 0.2439
1204$ 0.2161
3000$ 0.1464
6000$ 0.1427
9000$ 0.126
15000$ 0.1252
  

Availability4014
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.75
10$ 0.4625
100$ 0.2726
500$ 0.2024
1000$ 0.1848
3000$ 0.1617
6000$ 0.1485
9000$ 0.132


Availability47701
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 602
Multiples : 1
QtyUnit Price
602$ 0.432
861$ 0.302
1071$ 0.243
1208$ 0.2152
3000$ 0.1459
6000$ 0.1422
9000$ 0.1256
15000$ 0.1247


Availability12954
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 953
Multiples : 1
QtyUnit Price
953$ 0.273
988$ 0.2633
1021$ 0.2547
2500$ 0.2376
5000$ 0.2313
10000$ 0.2255

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the RUF020N02TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RUF020N02TL and other electronic components in the MOSFETs category and beyond.

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RUF020N02 Datasheet Nch 20V 2A Middle Power MOSFET llOutline SOT-323T V 20V DSS R (Max.) 105m DS(on) TUMT3 I 2A D P 0.8W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V drive 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT3). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking XK llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20151030 - Rev.001 RUF020N02 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 75 105 GS D V = 2.5V, I = 2A - 95 135 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 1A - 130 185 GS D V = 1.5V, I = 0.4A - 170 240 GS D R Gate resistance f = 1MHz, open drain - 24 - G Forward Transfer *4 Y V = 10V, I = 2A 1.8 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20151030 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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