Product Information

SCS212AGHRC

SCS212AGHRC electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 650V 12ASiC SBD AEC-Q101 Qualified

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.8452 ea
Line Total: USD 8.85

3336 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2891 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 6.7965
10 : USD 5.7155
100 : USD 5.0025
500 : USD 4.6
1000 : USD 4.255
2000 : USD 4.255

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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SCS212AGHR Datasheet Automotive Grade SiC Schottky Barrier Diode lOutline (1) TO-220AC V 650V R I 12A F Q 18nC C (3) (2) lFeatures lInner circuit (1) 1) AEC-Q101 qualified 2) Low forward voltage (1) Cathode 3) Negligible recovery time/current (2) Cathode (3) Anode 4) Temperature independent switching behavior (2) (3) lApplications lPackaging specifications On Board Charger Packaging Tube DC/DC Converter Reel size (mm) - Wireless Charger Tape width (mm) - Type EV Charger Basic ordering unit (pcs) 50 Packing code C Marking SCS212AG lAbsolute maximum ratings (T = 25C) j Parameter Symbol Value Unit Reverse voltage (repetitive peak) V 650 V RM Reverse voltage (DC) V 650 V R (T = I Continuous forward current 135C) 12 A c F PW=10ms sinusoidal, T =25C 43 A j Surge non- repetitive forward PW=10ms sinusoidal, T =150C I 34 A j FSM current PW=10 ms square, T =25C 170 A j 1 * I Repetitive peak forward current 52 A FRM 2 PW=10ms, T =25C 9.2 j A s 2 2 i t value i dt 2 PW=10ms, T =150C 5.7 A s j 2 * P Total power dissipation 93 W D T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg *1 T =100C, T =150C, Duty cycle=10% *2 T =25C c j c www.rohm.com TSQ50220-SCS212AGHR 2018 ROHM Co., Ltd. All rights reserved. 1/5 29.Jun.2018 - Rev.002 TSZ2211114001Datasheet SCS212AGHR lElectrical characteristics (T = 25C) j Values Parameter Symbol Conditions Unit Min. Typ. Max. DC blocking voltage V I =2.4mA 650 - - V DC R I =12A,T =25C - 1.35 1.55 V F j Forward voltage V I =12A,T =150C - 1.55 - V F F j I =12A,T =175C - 1.63 - V F j V =600V,T =25C - 2.4 240 mA R j I V =600V,T =150C Reverse current - 36 - mA R R j V =600V,T =175C - 84 - mA R j V =1V,f=1MHz - 440 - pF R Total capacitance C V =600V,f=1MHz - 44 - pF R Total capacitive charge Q V =400V,di/dt=350A/ms - 18 - nC C R t Switching time V =400V,di/dt=350A/ms - 16 - ns C R lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. R Thermal resistance - - 1.3 1.6 C/W th(j-c) lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 3.70E-01 1.98E-03 th1 th1 R C 9.23E-01 K/W 6.54E-03 Ws/K th2 th2 R 2.06E-03 C 1.96E+00 th3 th3 R R T th,n T th1 j c PD C C C th1 th2 th,n T a www.rohm.com TSQ50220-SCS212AGHR 2018 ROHM Co., Ltd. All rights reserved. 2/5 29.Jun.2018 - Rev.002 TSZ2211115001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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