SCS215KGHR SiC Schottky Barrier Diode Data Sheet l AEC-Q101 Qualified (1) TO-220AC V 1200V R I 15A F Q 51nC C (3) (2) l l Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planer Schottky Diode Type Basic ordering unit (pcs) 50 Taping code C Marking SCS215KG lAbsolute maximum ratings (Tj = 25C) Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 1200 V RM V Reverse voltage (DC) 1200 V R 1 I Continuous forward current A F 15* 2 A 65* 3 I Surge no repetitive forward current A 240* FSM 4 A 49* 5 Repetitive peak forward current I A FRM 63* 6 Total power disspation P W 180* D Junction temperature Tj 175 C Range of storage temperature Tstg -55 to +175 C *1 Tc=140C *2 PW=8.3ms sinusoidal, Tj=25C *3 PW=10 ms square, Tj=25C *4 PW=8.3ms sinusoidal, Tj=150C *5 Tc=100C, Tj=150C, Duty cycle=10% *6 Tc=25C www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 1/5Data Sheet SCS215KGHR lElectrical characteristics (Tj = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =0.3mA DC blocking voltage 1200 - - V DC R I =15A,Tj=25C - 1.4 1.6 V F V I =15A,Tj=150C Forward voltage - 1.8 - V F F I =15A,Tj=175C - 1.9 - V F V =1200V,Tj=25C - 15 300 mA R I V =1200V,Tj=150C Reverse current - 120 - mA R R V =1200V,Tj=175C - 195 - mA R V =1V,f=1MHz - 790 - pF R Total capacitance C V =800V,f=1MHz - 63 - pF R Total capacitive charge Qc V =800V,di/dt=500A/ms - 51 - nC R V =800V,di/dt=500A/ms Switching time tc - 18 - ns R lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Thermal resistance R - - 0.67 0.8 C/W th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 2/5