Product Information

SCS220KGHRC

SCS220KGHRC electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers 1200V 20A SiC SBD AEC-Q101 Qualified

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 19.2549
10 : USD 18.018
100 : USD 15.6446
500 : USD 14.0734
1000 : USD 12.9926
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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SCS220KGHR Datasheet Automotive Grade SiC Schottky Barrier Diode lOutline TO-220AC (1) V 1200V R I 20A F Q 65nC C (3) (2) lFeatures lInner circuit (1) 1) AEC-Q101 qualified 2) Low forward voltage (1) Cathode 3) Negligible recovery time/current (2) Cathode (3) Anode 4) Temperature independent switching behavior (2) (3) lApplications lPackaging specifications On Board Charger Packaging Tube DC/DC Converter Reel size (mm) - Wireless Charger Tape width (mm) - Type EV Charger Basic ordering unit (pcs) 50 Packing code C Marking SCS220KG lAbsolute maximum ratings (T = 25C) j Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 1200 V RM Reverse voltage (DC) V 1200 V R Continuous forward current (T = 133C) I 20 A c F PW=10ms sinusoidal, T =25C 79 A j Surge non- PW=10ms sinusoidal, T =150C I repetitive forward 59 A j FSM current PW=10 ms square, T =25C 310 A j 1 * I Repetitive peak forward current 83 A FRM 2 PW=10ms, T =25C 31 j A s 2 2 i t value i dt 2 PW=10ms, T =150C 17 j A s 2 * Total power dissipation P 210 W D T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg *1 T =100C, T =150C, Duty cycle=10% *2 T =25C c j c www.rohm.com TSQ50220-SCS220KGHR 2018 ROHM Co., Ltd. All rights reserved. 1/5 29.Jun.2018 - Rev.001 TSZ2211114001Datasheet SCS220KGHR lElectrical characteristics (T = 25C) j Values Parameter Symbol Conditions Unit Min. Typ. Max. DC blocking voltage V I =0.4mA 1200 - - V DC R I =20A,T =25C - 1.4 1.6 V F j Forward voltage V I =20A,T =150C - 1.8 - V F F j I =20A,T =175C - 1.9 - V F j V =1200V,T =25C - 20 400 mA R j I V =1200V,T =150C Reverse current - 160 - mA R R j V =1200V,T =175C - 260 - mA R j V =1V,f=1MHz - 1050 - pF R Total capacitance C V =800V,f=1MHz - 85 - pF R Total capacitive charge Q V =800V,di/dt=500A/ms - 65 - nC C R t Switching time V =800V,di/dt=500A/ms - 18 - ns C R lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. R Thermal resistance - - 0.62 0.71 C/W th(j-c) lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 1.59E-01 5.03E-03 th1 th1 R C 2.74E-01 K/W 7.27E-03 Ws/K th2 th2 R 1.87E-01 C 1.39E-01 th3 th3 R R T th,n T th1 j c PD C C C th1 th2 th,n T a www.rohm.com TSQ50220-SCS220KGHR 2018 ROHM Co., Ltd. All rights reserved. 2/5 29.Jun.2018 - Rev.001 TSZ2211115001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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