SH8M41 Datasheet 80V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 80V -80V DSS SOP8 R (Max.) 130m 240m DS(on) I 3.4A 2.6A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8M41 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 80 -80 V DSS I Continuous drain current 3.4 2.6 A D *1 I Pulsed drain current 13.6 10.4 A DP V Gate - Source voltage 20 20 V GSS *2 P 2.0 D Power dissipation total W *3 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20161202 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. SH8M41 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient total /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 80 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -80 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 81.3 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -73.8 - Tr1 V = 80V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -80V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 10 DS GS Gate - Source I A GSS leakage current Tr2 V = 0V, V = 20V - - 10 DS GS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -2.5 DS D V I = 1mA, referenced to 25 Tr1 - -4.4 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.1 - j D V = 10V, I = 3.4A - 90 130 GS D Tr1 V = 4.5V, I = 3.4A - 110 150 GS D V = 4.0V, I = 3.4A - 120 160 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -2.6A - 165 240 GS D Tr2 V = -4.5V, I = -1.3A - 220 300 GS D V = -4.0V, I = -1.3A - 230 310 GS D Tr1 - 5.0 - R Gate resistance f=1MHz, open drain G Tr2 - 8.9 - Tr1 V = 10V, I = 3.4A 3.0 - - DS D Forward Transfer *4 Y S fs Admittance V = -10V, I = -2.6A Tr2 2.0 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/19 20161202 - Rev.001