X-On Electronics has gained recognition as a prominent supplier of RSS100N03FRATB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSS100N03FRATB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSS100N03FRATB ROHM

RSS100N03FRATB electronic component of ROHM
RSS100N03FRATB ROHM
RSS100N03FRATB MOSFETs
RSS100N03FRATB  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSS100N03FRATB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
Datasheet: RSS100N03FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4 ea
Line Total: USD 1.4 
Availability - 1284
Ship by Tue. 06 May to Thu. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1284
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 1.4
10 : USD 0.9024
100 : USD 0.5819
500 : USD 0.4763
1000 : USD 0.4323
2500 : USD 0.4213
5000 : USD 0.4169
10000 : USD 0.4114

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSS100N03FRATB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSS100N03FRATB and other electronic components in the MOSFETs category and beyond.

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RSS100N03FRA Datasheet Nch 30V 10A Power MOSFET llOutline V 30V DSS R (Max.) 13.3m DS(on) SOP8 I 10A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RSS100N03 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 10 A D *1 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20161130 - Rev.002 RSS100N03FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 10A - 9.5 13.3 GS D Static drain - source *4 R V = 4.5V, I = 10A - 12.5 17.5 m DS(on) GS D on - state resistance V = 4.0V, I = 10A - 13.5 18.9 GS D R Gate resistance f = 1MHz, open drain - 2.8 - G Forward Transfer *4 Y V = 10V, I = 10A 6.0 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20161130 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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