Infrared light emitting diode, top view type SIR-341ST3F Datasheet The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. Applications Outline Optical control equipment Light source for remote control devices Features 1) Compact ( 3.1mm). High efficiency, high output P =8.4mW (I =50mA). 2) O F Wide radiation angle 1/2= 116deg. 3) Peak wavelength well suited to silicon detectors ( =940nm). 4) P 5) Good current-optical output linearity. 6) Long life, high reliability. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit I 75 mA Forward current F V 5 V Reverse voltage R P Power dissipation 100 mW D I * Pulse forward current 500 mA FP T Operating temperature 25 to 85 C opr T C Storage temperature 40 to 85 stg *Pulse width = 0.1 msec, duty ratio 1% www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.E 1/4Datasheet SIR-341ST3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. P I =50mA -8.4 - mW Optical output O F I I =50mA Emitting strength 5.6 18.1 - mW/sr E F V I =50mA -1.3 1.5 V Forward voltage F F I V =3V Reverse current -- 10 A R R I =50mA - 940 - nm Peak light emitting wavelength p F I =50mA Spectral line half width -40 - nm F I =50mA - - deg Half-viewing angle 16 1/2 F I =50mA Response time trtf - 1.0 - s F f I =50mA Cut-off frequency -1.0 -MHz C F Classified table of rank Emitting Strength I Item Unit E 5.6 11.7 mW / sr Lto Mt8.2o 17.6 mW / sr 12.3 25.8 mW / sr Nto Pt18.0o 38.8 mW / sr Condition I =50mA F www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.E 2/4