Product Information

SMF11VTFTR

SMF11VTFTR electronic component of ROHM

Datasheet
ESD Suppressors TVS Diodes 11V Vrwm 1000mW PD SOD-123FL; PMDU

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4474 ea
Line Total: USD 0.45

5732 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5732 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1
1 : USD 0.4474
10 : USD 0.3485
100 : USD 0.2128
500 : USD 0.1966
1000 : USD 0.1414
3000 : USD 0.13
9000 : USD 0.1184
24000 : USD 0.1184
45000 : USD 0.1138

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
LoadingGif

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SMF11VTF Transient Voltage Suppressor (AEC-Q101 qualified) Data sheet Outline V V 11 RWM P 200 W PP I 11.0 A PP Feature Inner Circuit High reliability Small mold type Application Packaging Specification Surge Protection Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Quantity(pcs) 3000 Silicon Epitaxial Planar Taping Code TR Marking JW (T = 25) Absolute Maximum Rating a Min. Max. Parameter Symbol Conditions Unit P Peak Pulse Power tp=10/1000us - 200 W pp I Peak Pulse Current tp=10/1000us - 11.0 A pp P Power dissipation on Glass-epoxy substrate - 1 W D T Junction temperature - - 150 j T Storage temperature - -65 150 stg Air - 30 kV ESD capability V IEC61000-4-2 ESD Contact - 30 kV www.rohm.com 1/6 2019- ROHM Co., Ltd. All rights reserved. 2019/05/30 Rev.006SMFxxVTF Series Data sheet Characteristic (Ta = 25C) Symbol Reverse Stand-off voltage Breakdown voltage Reverse Current Clamping voltage V Rank(V) Z (1) I (A) V (V) V (V) V (V) RWM BR R CL I (mA) V (V) I (A) MIN. MAX. MAX. MAX. T R PP 5.0 6.40 40 5.0 5.0 9.2 21.7 5.0 6.0 6.67 40 26 6.0 10.3 19.4 6.0 6.5 7.72 40 20 6.5 11.2 17.9 6.5 7.0 7.78 40 3.0 7.0 12.0 16.7 7.0 7.5 8.33 40 0.1 7.5 12.9 15.5 7.5 8.0 8.89 40 0.1 8.0 13.6 14.7 8.0 9.0 10.0 40 0.1 9.0 15.4 13.0 9.0 10.0 11.1 20 0.1 10 17.0 11.8 10 11.0 12.2 20 0.1 11 18.2 11.0 11 12.0 13.3 20 0.1 12 19.9 10.1 12 13.0 14.4 20 0.1 13 21.5 9.3 13 14.0 15.6 20 0.1 14 23.2 8.6 14 15.0 16.7 20 0.1 15 24.4 8.2 15 16.0 17.2 20 0.1 16 26.0 7.7 16 17.0 18.9 20 0.1 17 27.6 7.2 17 18.0 20.0 20 0.1 18 29.2 6.8 18 20.0 22.2 10 0.1 20 32.4 6.2 20 22.0 24.4 10 0.1 22 35.5 5.6 22 24.0 26.7 10 0.1 24 38.9 5.1 24 26.0 28.9 10 0.1 26 42.1 4.8 26 28.0 31.1 10 0.1 28 45.4 4.4 28 30.0 33.3 10 0.1 30 48.4 4.1 30 33.0 36.7 10 0.1 33 53.3 3.8 33 Note(1) V test time is 40ms. BR Marking V Rank(V) V Rank(V) Z Marking Z Marking 5.0 AW 15.0 NW 6.0 BW 16.0 PW 6.5 CW 17.0 YW 7.0 DW 18.0 QW 7.5 EW 20.0 RW 8.0 FW 22.0 SW 9.0 GW 24.0 TW 10.0 HW 26.0 UW 11.0 JW 28.0 VW 12.0 KW 30.0 WW 13.0 LW 33.0 XW 14.0 MW www.rohm.com 2/6 2019- ROHM Co., Ltd. All rights reserved. 2019/05/30 Rev.006

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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