Product Information

SP8K1TB

SP8K1TB electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET TRANS MOSFET NCH 30V 5A 8PIN
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0167 ea
Line Total: USD 1.02

21 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SP8K1TB
ROHM

1 : USD 0.8556
10 : USD 0.7107
100 : USD 0.5693
500 : USD 0.4968
1000 : USD 0.4163
2500 : USD 0.4014
5000 : USD 0.3968
10000 : USD 0.3968
25000 : USD 0.3968

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

( ) 5 (4) ( ) ( ) 8 1 SP8K1 Transistors Switching (30V, 5.0A) SP8K1 z External dimensions (Unit : mm) z Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.00.2 3) Small and Surface Mount Package (SOP8). z Application Power switching, DC / DC converter. 0.20.1 0.40.1 z Structure 1.27 0.1 Silicon N-channel Each lead has same dimensions MOS FET z Equivalent circuit z Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr. 1 and Tr. 2. (8) (7) (6) (5) (8) (7) (6) (5) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage VGSS 20 V I 5.0 A Continuous D 2 2 Drain current (1) (2) (3) (4) 1 Pulsed IDP 20 A (1) Tr1 Source Source current Continuous IS 1.6 A (2) Tr1 Gate (Body diode) 1 1 1 Pulsed ISP 6.4 A (3) Tr2 Source 2 (4) Tr2 Gate Total power dissipation PD 2 W (5) Tr2 Drain Channel temperature Tch 150 C (1) (2) (3) (4) (6) Tr2 Drain Storage temperature Tstg 55 to +150 C (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 1 Pw 10s, Duty cycle 1% 2 BODY DIODE 2 MOUNTED ON A CERAMIC BOARD. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Thermal resistance (Ta=25C) Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. 1/3 6.00.3 1.50.1 3.90.15 0.15 Max.1.75 0.50.1SP8K1 Transistors z Electrical characteristics (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 36 51 ID=5.0A, VGS=10V Static drain-source on-state R 52 73 m I =5.0A, V =4.5V DS (on) D GS resistance 58 82 ID=5.0A, VGS=4V Forward transfer admittance Yfs 3.0 SID=5.0A, VDS=10V Input capacitance Ciss 230 pF VDS=10V Output capacitance C 80 pF V =0V oss GS Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time td (on) 6 ns ID=2.5A, VDD 15V Rise time tr 8 ns V =10V GS Turn-off delay time td (off) 22 ns RL=6 Fall time tf 5 ns RGS=10 Total gate charge Qg 3.9 5.5 nC VDD 15V Gate-source charge Q 1.1 nC V =5V gs GS Gate-drain charge Qgd1.4 nC ID=5.0A Pulsed z Body diode characteristics (Source-Drain Characteristics) (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed 2/3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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