SPA06N60C3 TM CoolMOS Power Transistor Product Summary Features V T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge 1) 6.2 A I D Periodic avalanche rated High peak current capability Ultra low effective capacitances P-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated package (2500 V AC 1 minute) Type Package Ordering Code Marking SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C 6.2 A Continuous drain current D C T =100 C 3.9 C 1) I T =25 C 18.6 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.1 A, V =50 V 200 mJ AS D DD 1),2) E I =6.2 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 1) I 6.2 A Avalanche current, repetitive t AR AR I =6.2 A, V =480 V, D DS Drain source voltage slope dv /dt 50 V/ns T =125 C j Gate source voltage V 20 static V GS V AC (f >1 Hz) 30 GS P T =25 C 32 Power dissipation W tot C T , T Operating and storage temperature -55 ... 150 C j stg Rev. 1.3 page 1 2010-12-21 Rev 1.4 1 2017-08-17SPA06N60C3 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.92 K/W thJC Thermal resistance, junction - R leaded - - 80 thJA ambient 1.6 mm (0.063 in.) Soldering temperature T - - 260 C sold from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D Avalanche breakdown voltage V V =0 V, I =6.2 A - 700 - (BR)DS GS D V V =V , I =0.26 mA Gate threshold voltage 2.1 3 3.9 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =600 V, V =0 V, DS GS - - 100 T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =3.9 A, GS D Drain-source on-state resistance R - 0.68 0.75 DS(on) T =25 C j V =10 V, I =3.9 A, GS D - 1.82 - T =150 C j R Gate resistance f =1 MHz, open drain - 1 - G V >2 I R , DS D DS(on)max Transconductance g - 5.6 - S fs I =3.9 A D Rev. 1.3 page 2 2010-12-21 Rev 1.4 2 2017-08-17