TT8J2TR ROHM

TT8J2TR electronic component of ROHM
TT8J2TR ROHM
TT8J2TR MOSFETs
TT8J2TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TT8J2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8J2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TT8J2TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET SW MOSFET MIDDLE PWR P CH -30V-2.5A
Datasheet: TT8J2TR Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4758
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2357
10$ 1.0386
100$ 0.7969
500$ 0.63
1000$ 0.504
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2357
10$ 1.0386
100$ 0.7969
500$ 0.63
1000$ 0.504
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.347
6000$ 0.3404
9000$ 0.3404
12000$ 0.3404
15000$ 0.3337
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3625
10$ 0.8628
100$ 0.5357
500$ 0.4444
1000$ 0.4026
3000$ 0.3586
6000$ 0.3553
9000$ 0.3553
24000$ 0.3553
N/A

Obsolete

Availability 0
MOQ : 305
Multiples : 1
QtyUnit Price
305$ 0.3452
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2563
48000$ 0.207
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Obsolete

Availability 0
MOQ : 217
Multiples : 1
QtyUnit Price
217$ 0.4144
N/A

Obsolete

Availability 0
MOQ : 98
Multiples : 1
QtyUnit Price
98$ 0.0958
100$ 0.0805
250$ 0.0789
N/A

Obsolete

Availability 0
MOQ : 198
Multiples : 1
QtyUnit Price
198$ 0.3994
500$ 0.3914
N/A

Obsolete

Availability 0
MOQ : 198
Multiples : 1
QtyUnit Price
198$ 0.4247
500$ 0.4162
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TT8J2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8J2TR and other electronic components in the MOSFETs category and beyond.

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TT8J2 Datasheet -30V Pch + Pch Middle Power MOSFET llOutline TSST8 V -30V DSS R (Max.) 84m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) High power package. 3) Low voltage drive(4V). 4) Built-in G-S Protection Diode. 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 20 V GSS total 1.25 *2 P D Power dissipation element 1.0 W *3 P total 0.6 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8J2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 100 *2 R thJA Thermal resistance, junction - ambient element - - 125 /W *3 R total - - 208 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.5A - 60 84 GS D Static drain - source *4 R V = -4.5V, I = -1.2A - 95 130 m DS(on) GS D on - state resistance V = -4V, I = -1.2A - 115 160 GS D Forward Transfer *4 Y V = -10V, I = -2.5A 1.8 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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